Patents by Inventor Anhe HE

Anhe HE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10707380
    Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.
    Type: Grant
    Filed: September 30, 2018
    Date of Patent: July 7, 2020
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Gaolin Zheng, Hou-Jun Wu, Anhe He, Shiwei Liu, Kang-Wei Peng, Su-Hui Lin, Chia-Hung Chang
  • Patent number: 10707395
    Abstract: A flip-chip LED chip includes: a substrate; a first semiconductor layer; a light emitting layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer and extending downward to the first semiconductor layer; first and second metal layers respectively over portions of the first and second semiconductor layers; an insulating layer covering the first and second metal layers, the second and first semiconductor layers in the local defect region. The insulating layer has opening structures over the first and second metal layers respectively; a eutectic electrode structure over the insulating layer with openings and including first and second eutectic layers from bottom up at a vertical direction, and including first-type and second-type electrode regions at a horizontal direction. The second eutectic layer does not overlap with the first and second metal layers at the vertical direction.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: July 7, 2020
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Anhe He, Suhui Lin, Jiansen Zheng, Kangwei Peng, Xiaoxiong Lin, Chenke Hsu
  • Patent number: 10629776
    Abstract: A light emitting device includes a substrate, a light emitting unit disposed on the substrate, a metallic electrode unit, a metallic adhesion layer disposed on the first and second electrodes of the electrode unit, and a protective layer disposed on the adhesion layer. The first electrode is disposed on a portion of a first-type semiconductor layer of the light emitting unit. The second electrode is disposed on a second-type semiconductor layer of the light emitting unit disposed on a separated portion of the first-type semiconductor layer. The first and second electrodes are partially exposed by the protective layer and the adhesion layer that is partially exposed by the protective layer. A production method for the light emitting device is also disclosed.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: April 21, 2020
    Assignee: Xiamen San' an Optoelectronics Co., Ltd.
    Inventors: Anhe He, Su-Hui Lin, Kang-Wei Peng, Ling-Yuan Hong, Yu-Chieh Huang, Zhanggen Xia
  • Publication number: 20190267528
    Abstract: A flip-chip LED chip includes: a substrate; a first semiconductor layer; a light emitting layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer and extending downward to the first semiconductor layer; first and second metal layers respectively over portions of the first and second semiconductor layers; an insulating layer covering the first and second metal layers, the second and first semiconductor layers in the local defect region. The insulating layer has opening structures over the first and second metal layers respectively; a eutectic electrode structure over the insulating layer with openings and including first and second eutectic layers from bottom up at a vertical direction, and including first-type and second-type electrode regions at a horizontal direction. The second eutectic layer does not overlap with the first and second metal layers at the vertical direction.
    Type: Application
    Filed: May 10, 2019
    Publication date: August 29, 2019
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Anhe HE, Suhui LIN, Jiansen ZHENG, Kangwei PENG, Xiaoxiong LIN, Chenke HSU
  • Publication number: 20190189851
    Abstract: A light emitting device includes a substrate, a light emitting unit disposed on the substrate, a metallic electrode unit, a metallic adhesion layer disposed on the first and second electrodes of the electrode unit, and a protective layer disposed on the adhesion layer. The first electrode is disposed on a portion of a first-type semiconductor layer of the light emitting unit. The second electrode is disposed on a second-type semiconductor layer of the light emitting unit disposed on a separated portion of the first-type semiconductor layer. The first and second electrodes are partially exposed by the protective layer and the adhesion layer that is partially exposed by the protective layer. A production method for the light emitting device is also disclosed.
    Type: Application
    Filed: February 26, 2019
    Publication date: June 20, 2019
    Inventors: ANHE HE, SU-HUI LIN, KANG-WEI PENG, LING-YUAN HONG, YU-CHIEH HUANG, ZHANGGEN XIA
  • Patent number: 10297736
    Abstract: A Flip-chip LED chip includes: a substrate; a first semiconductor layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer, which extends downward to the first semiconductor layer; a first metal layer over part of the first semiconductor layer; a second metal layer over part of the second semiconductor layer; an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, with opening structures over the first metal layer and the second metal layer respectively; an eutectic electrode structure over the insulating layer, including a first eutectic layer and a second eutectic layer at vertical direction, and a first-type electrode region and a second-type electrode region at horizontal direction. Poor packaging caused by high eutectic void content during eutectic bonding process can therefore be reduced.
    Type: Grant
    Filed: December 24, 2017
    Date of Patent: May 21, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Anhe He, Suhui Lin, Jiansen Zheng, Kangwei Peng, Xiaoxiong Lin, Chenke Hsu
  • Patent number: 10297733
    Abstract: A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after curing, is used for insulating/connecting, making the isolated groove between the light emitting units extremely narrow (opening width ?0.4 ?m, such as ?0.3 ?m), which improves single chip output, expands effective light emitting region area and improves light emitting efficiency; the serial/parallel connection yield is improved for this method avoids easy disconnection of wires across a groove with extremely large height difference in conventional high-voltage light emitting diodes; in addition, the manufacturing cost is reduced for the LED can be directly fabricated at the chip fabrication end.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: May 21, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Hou-jun Wu, Jiansen Zheng, Chen-ke Hsu, Anhe He, Chia-en Lee
  • Publication number: 20190123243
    Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.
    Type: Application
    Filed: September 30, 2018
    Publication date: April 25, 2019
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: GAOLIN ZHENG, HOU-JUN WU, ANHE HE, SHIWEI LIU, KANG-WEI PENG, SU-HUI LIN, CHIA-HUNG CHANG
  • Patent number: 10205057
    Abstract: A flip-chip light-emitting diode structure includes a substrate; an epitaxial layer over the substrate, which includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a first electrode structure over the first semiconductor layer; a second electrode structure over the second semiconductor layer; wherein, the first electrode structure includes a first electrode body and a first electrode ring; the second electrode structure includes a second electrode body and a second electrode ring; the thickness of the first electrode ring is greater than or equal to that of the first electrode body and the thickness of the second electrode ring is greater than or equal to that of the second electrode body. As barrier structures, the first and the second electrode rings are used for avoiding short circuit during packaging and usage of the light-emitting diode due to overflow of solid crystal conductive materials, thus improving reliability.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: February 12, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Anhe He, Su-hui Lin, Jiansen Zheng, Kang-wei Peng, Xiaoxiong Lin, Chen-ke Hsu
  • Publication number: 20180123011
    Abstract: A Flip-chip LED chip includes: a substrate; a first semiconductor layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer, which extends downward to the first semiconductor layer; a first metal layer over part of the first semiconductor layer; a second metal layer over part of the second semiconductor layer; an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, with opening structures over the first metal layer and the second metal layer respectively; an eutectic electrode structure over the insulating layer, including a first eutectic layer and a second eutectic layer at vertical direction, and a first-type electrode region and a second-type electrode region at horizontal direction. Poor packaging caused by high eutectic void content during eutectic bonding process can therefore be reduced.
    Type: Application
    Filed: December 24, 2017
    Publication date: May 3, 2018
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Anhe HE, Suhui LIN, Jiansen ZHENG, Kangwei PENG, Xiaoxiong LIN, Chenke HSU
  • Publication number: 20180108810
    Abstract: A flip-chip light-emitting diode structure includes a substrate; an epitaxial layer over the substrate, which includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a first electrode structure over the first semiconductor layer; a second electrode structure over the second semiconductor layer; wherein, the first electrode structure includes a first electrode body and a first electrode ring; the second electrode structure includes a second electrode body and a second electrode ring; the thickness of the first electrode ring is greater than or equal to that of the first electrode body and the thickness of the second electrode ring is greater than or equal to that of the second electrode body. As barrier structures, the first and the second electrode rings are used for avoiding short circuit during packaging and usage of the light-emitting diode due to overflow of solid crystal conductive materials, thus improving reliability.
    Type: Application
    Filed: December 18, 2017
    Publication date: April 19, 2018
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Anhe HE, Su-hui LIN, Jiansen ZHENG, Kang-wei PENG, Xiaoxiong LIN, Chen-ke HSU
  • Publication number: 20170110638
    Abstract: A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after curing, is used for insulating/connecting, making the isolated groove between the light emitting units extremely narrow (opening width?0.4 ?m, such as ?0.3 ?m), which improves single chip output, expands effective light emitting region area and improves light emitting efficiency; the serial/parallel connection yield is improved for this method avoids easy disconnection of wires across a groove with extremely large height difference in conventional high-voltage light emitting diodes; in addition, the manufacturing cost is reduced for the LED can be directly fabricated at the chip fabrication end.
    Type: Application
    Filed: December 27, 2016
    Publication date: April 20, 2017
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Hou-jun WU, Jiansen ZHENG, Chen-ke HSU, Anhe HE, Chia-en LEE
  • Publication number: 20160365488
    Abstract: A flip-chip light LED includes: a substrate; an epitaxial layer on the substrate, wherein, the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer and a light emitting layer between the first semiconductor layer and the second semiconductor layer; at least one opening structure, which is at the epitaxial layer edge and extends to the substrate surface, making parts of the side wall of the epitaxial layer and the substrate surface exposed, such that the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer on the opening structure as the metal electrode isolating layer.
    Type: Application
    Filed: August 13, 2016
    Publication date: December 15, 2016
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Anhe HE, Su-hui LIN, Jiansen ZHENG, Kangwei PENG, Xiaoxiong LIN, Chen-ke HSU
  • Patent number: 9190395
    Abstract: A GaN-based LED includes a substrate; an epitaxial layer over the substrate; a current spreading layer over a P-type layer; and a P electrode over the current spreading layer. The epitaxial layer includes the P-type layer, a light-emitting area, and an N-type layer. An annular reflecting layer and a metal reflecting layer are formed between the P electrode and the epitaxial layer. The geometric center vertically corresponds to the P electrode; the annular reflecting layer is formed between the current spreading layer and the P-type layer; the metal reflecting layer is formed between the current spreading layer and the P electrode; and a preset distance is arranged between the annular reflecting layer and the metal reflecting layer. The annular reflecting layer and the metal reflecting layer reduce light absorption of the P electrode and improve light extraction efficiency.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: November 17, 2015
    Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
    Inventors: Jiansen Zheng, Suhui Lin, Kangwei Peng, Lingyuan Hong, Anhe He
  • Publication number: 20150060879
    Abstract: A GaN-based LED includes a substrate; an epitaxial layer over the substrate; a current spreading layer over a P-type layer; and a P electrode over the current spreading layer. The epitaxial layer includes the P-type layer, a light-emitting area, and an N-type layer. An annular reflecting layer and a metal reflecting layer are formed between the P electrode and the epitaxial layer. The geometric center vertically corresponds to the P electrode; the annular reflecting layer is formed between the current spreading layer and the P-type layer; the metal reflecting layer is formed between the current spreading layer and the P electrode; and a preset distance is arranged between the annular reflecting layer and the metal reflecting layer. The annular reflecting layer and the metal reflecting layer reduce light absorption of the P electrode and improve light extraction efficiency.
    Type: Application
    Filed: November 7, 2014
    Publication date: March 5, 2015
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: JIANSEN ZHENG, SUHUI LIN, KANGWEI PENG, LINGYUAN HONG, ANHE HE
  • Publication number: 20110297914
    Abstract: The present invention discloses a double-reflective-layer gallium nitride-based flip-chip light-emitting diode with both a distributed Bragg reflector and a metal reflective layer on its side and a fabrication method thereof. The light-emitting diode includes: a sapphire substrate; a buffer layer, an N-GaN layer, a multiple-quantum-well layer and a P-GaN layer stacked on the sapphire substrate in that order; a transparent conductive layer formed on the P-GaN layer; a distributed Bragg reflector formed over a side of the epitaxial layer and the transparent conductive layer; a metal reflective layer formed on the DBR; a P-type ohmic contact electrode formed on the transparent conductive layer; and an N-type ohmic contact electrode formed on the exposed N-GaN layer, wherein the P-type ohmic contact electrode and the N-type ohmic contact electrode are bonded to a heat dissipation substrate through a metal conductive layer and a ball bonder.
    Type: Application
    Filed: June 3, 2011
    Publication date: December 8, 2011
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jiansen ZHENG, Suhui LIN, Anhe HE, Kechuang LIN