Patents by Inventor Anil Kottantharyil

Anil Kottantharyil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a fully silicided gate and devices obtained thereof
    Patent number: 7491635
    Abstract: A method for manufacturing a MOSFET device with a fully silicided (FUSI) gate is described. This method may be used to prevent formation of shorts between the FUSI gate and a contact to a source and/or a drain region. In particular, the method discloses the formation of an expansion volume above a gate dielectric. The volume is designed to substantially contain the fully silicided gate.
    Type: Grant
    Filed: July 11, 2006
    Date of Patent: February 17, 2009
    Assignees: Interuniversitair Microelektronica Centrum, Texas Instruments Incorporated, Koninklijke Philips Electronics
    Inventors: Jorge Adrian Kittl, Anne Lauwers, Anabela Veloso, Anil Kottantharyil, Marcus Johannes Henricus Van Dal
  • Method for forming a fully silicided gate and devices obtained thereof
    Publication number: 20070015334
    Abstract: A method for manufacturing a MOSFET device with a fully silicided (FUSI) gate is described. This method may be used to prevent formation of shorts between the FUSI gate and a contact to a source and/or a drain region. In particular, the method discloses the formation of an expansion volume above a gate dielectric. The volume is designed to substantially contain the fully silicided gate.
    Type: Application
    Filed: July 11, 2006
    Publication date: January 18, 2007
    Applicants: Interuniversitair Microelektronica Centrum (IMEC), Texas Instruments Incorporated, Koninklijke Philips Electronics
    Inventors: Jorge Kittl, Anne Lauwers, Anabela Veloso, Anil Kottantharyil, Marcus Van Dal