Patents by Inventor Anil Kumar KODURU

Anil Kumar KODURU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11476186
    Abstract: A cell on an IC includes a first set of Mx layer interconnects coupled to a first voltage, a second set of Mx layer interconnects coupled to a second voltage different than the first voltage, and a MIM capacitor structure below the Mx layer. The MIM capacitor structure includes a CTM, a CBM, and an insulator between portions of the CTM and the CBM. The first set of Mx layer interconnects is coupled to the CTM. The second set of Mx layer interconnects is coupled to the CBM. The MIM capacitor structure is between the Mx layer and an Mx-1 layer. The MIM capacitor structure includes a plurality of openings. The MIM capacitor structure is continuous within the cell and extends to at least two edges of the cell. In one configuration, the MIM capacitor structure extends to each edge of the cell.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: October 18, 2022
    Assignee: QUALCOMM INCORPORATED
    Inventors: Ramaprasath Vilangudipitchai, Gudoor Reddy, Samrat Sinharoy, Smeeta Heggond, Anil Kumar Koduru, Kamesh Medisetti, Seung Hyuk Kang
  • Publication number: 20210391249
    Abstract: A cell on an IC includes a first set of Mx layer interconnects coupled to a first voltage, a second set of Mx layer interconnects coupled to a second voltage different than the first voltage, and a MIM capacitor structure below the Mx layer. The MIM capacitor structure includes a CTM, a CBM, and an insulator between portions of the CTM and the CBM. The first set of Mx layer interconnects is coupled to the CTM. The second set of Mx layer interconnects is coupled to the CBM. The MIM capacitor structure is between the Mx layer and an Mx-1 layer. The MIM capacitor structure includes a plurality of openings. The MIM capacitor structure is continuous within the cell and extends to at least two edges of the cell. In one configuration, the MIM capacitor structure extends to each edge of the cell.
    Type: Application
    Filed: October 27, 2020
    Publication date: December 16, 2021
    Inventors: Ramaprasath VILANGUDIPITCHAI, Gudoor REDDY, Samrat SINHAROY, Smeeta HEGGOND, Anil Kumar KODURU, Kamesh MEDISETTI, Seung Hyuk KANG
  • Publication number: 20170068772
    Abstract: A method of and an apparatus for optimizing timing delay and power leakage in a circuit. The apparatus determines at least one path of a plurality of paths in a network of logic elements, the at least one path including a plurality of cells, each of the cells being configured to perform a logical operation. In addition, the apparatus identifies a first cell of the plurality of cells based on a first cost factor associated with replacing the first cell with a first replacement cell that performs the same logical operation, the first cost factor being a function of a power leakage difference and a timing delay difference associated with the first cell and the first replacement cell. Furthermore, the apparatus replaces the first cell with the first replacement cell in the at least one path.
    Type: Application
    Filed: September 7, 2016
    Publication date: March 9, 2017
    Inventors: Kelageri NAGARAJ, Paras GUPTA, Thomas YU, Venkatesh NAYAK, Anil Kumar KODURU, Bhanuprakash GANGULA VENKATARAMA REDDY