Abstract: A method of fabricating a ferroelectric capacitor usable as a memory cell in a non-volatile integrated circuit memory integrated on a silicon substrate, preferably including an intermetallic barrier layer. The memory cell consists of a ferroelectric layer, for example of lead niobium zirconium titanate (PNZT) sandwiched between metal oxide electrodes, for example of lanthanum strontium cobaltite (LSCO), which forms with a crystalline orientation and provides a growth template for the crystalline formation of the ferroelectric. The intermetallic layer prevents diffusion of oxygen from the bottom LSCO electrode down to the underlying silicon. At least the bottom electrode is subjected to a rapid thernal anneal at an annealing temperature above its growth temperature. Thereby, the polarization and fatigue characteristics of the ferroelectric cell are improved. Also, a similar intermetallic layer may be placed above the ferroelectric cell.

Abstract: A ferroelectric capacitor structure and its method of making in which a ferroelectric stack of two metal-oxide electrodes sandwiching a ferroelectric layer is fabricated on a silicon substrate with an intervening barrier layer, preferably of TiN. In one embodiment, a platinum layer is grown between the TiN and the lower metal-oxide electrode at a sufficiently high temperature that provides crystallographically ordered growth of the ferroelectric stack. In another embodiment, the platinum layer was completely eliminated with the lower electrode being grown directly on the TiN. Although the conventional conductive metal-oxide used in the electrode is lanthanum strontium cobalt oxide (LSCO), lanthanum nickel oxide provides good electrical and lifetime characteristics in a ferroelectric cell. Alternatively, the electrodes can be formed of the rock-salt metal oxides, such as neodymium oxide (NdO).

Abstract: A ferroelectric memory cell integrated on a silicon substrate. The ferroelectric stack includes a ferroelectric layer, such as PbNbZrTiO, sandwiched between conductive metal-oxide electrodes, such as the perovskite LaSrCoO. The ferroelectric stack is grown over a barrier layer of an intermetallic alloy such as Ni.sub.3 Al or Ti.sub.3 Al, which is highly resistant to oxidation at elevated temperatures. The intermetallic layer is either deposited directly over the silicon substrate or over an intermediate TiN layer. The resulting structure does not require a platinum barrier layer.