Patents by Inventor Anil S. Bhanap

Anil S. Bhanap has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8475666
    Abstract: A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.
    Type: Grant
    Filed: September 15, 2004
    Date of Patent: July 2, 2013
    Assignee: Honeywell International Inc.
    Inventors: Teresa A. Ramos, Robert R. Roth, Anil S. Bhanap, Paul G. Apen, Denis H. Endisch, Brian J. Daniels, Ananth Naman, Nancy Iwamoto, Roger Y. Leung
  • Patent number: 7915159
    Abstract: A treating agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent which may be an acid, a base, an onium compound, a dehydrating agent, and combinations thereof, and a solvent or mixture of a main solvent and a co-solvent.
    Type: Grant
    Filed: August 12, 2005
    Date of Patent: March 29, 2011
    Assignee: Honeywell International Inc.
    Inventors: Anil S. Bhanap, Boris A. Korolev, Roger Y. Leung, Beth C. Munoz
  • Patent number: 7709371
    Abstract: A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment.
    Type: Grant
    Filed: September 15, 2004
    Date of Patent: May 4, 2010
    Assignee: Honeywell International Inc.
    Inventors: Anil S. Bhanap, Teresa A. Ramos, Nancy Iwamoto, Roger Y. Leung, Ananth Naman
  • Patent number: 7678712
    Abstract: The invention concerns a method for applying a surface modification agent composition for organosilicate glass dielectric films. More particularly, the invention pertains to a method for treating a silicate or organosilicate dielectric film on a substrate, which film either comprises silanol moieties or has had at least some previously present carbon containing moieties removed therefrom. The treatment adds carbon containing moieties to the film and/or seals surface pores of the film, when the film is porous.
    Type: Grant
    Filed: March 22, 2005
    Date of Patent: March 16, 2010
    Assignee: Honeywell International, Inc.
    Inventors: Anil S. Bhanap, Robert R. Roth, Kikue S. Burnham, Brian J. Daniels, Denis H. Endisch, Ilan Golecki