Patents by Inventor Anil Shriram Bhanap

Anil Shriram Bhanap has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DOPANT INK COMPOSITIONS FOR FORMING DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES, AND METHODS FOR FABRICATING DOPANT INK COMPOSITIONS
    Publication number: 20150126653
    Abstract: Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element. Further, the dopant ink composition includes a silicon-containing compound.
    Type: Application
    Filed: January 12, 2015
    Publication date: May 7, 2015
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: Ligui Zhou, Richard A. Spear, Roger Yu-Kwan Leung, Wenya Fan, Helen X. Xu, Lea M. Metin, Anil Shriram Bhanap
  • Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
    Patent number: 8975170
    Abstract: Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element. Further, the dopant ink composition includes a silicon-containing compound.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: March 10, 2015
    Assignee: Honeywell International Inc.
    Inventors: Ligui Zhou, Richard A. Spear, Roger Yu-Kwan Leung, Wenya Fan, Helen X. Xu, Lea M. Metin, Anil Shriram Bhanap
  • DOPANT INK COMPOSITIONS FOR FORMING DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES, AND METHODS FOR FABRICATING DOPANT INK COMPOSITIONS
    Publication number: 20130098266
    Abstract: Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element. Further, the dopant ink composition includes a silicon-containing compound.
    Type: Application
    Filed: October 24, 2011
    Publication date: April 25, 2013
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: Ligui Zhou, Richard A. Spear, Roger Yu-Kwan Leung, Wenya Fan, Helen X. Xu, Lea M. Metin, Anil Shriram Bhanap