Abstract: Disclosed are wire assemblies for solar cells. One wire assembly includes a first polymer film and a second polymer film overlaying the first polymer film. The second polymer film has a wire embedded in it such that a surface of the wire that is facing away from the first polymer film is exposed. The gauge of the wire is about 36 to 46 gauge. The thickness of the second polymer film is about ¼ to ½ the diameter of the wire and about 0.5 to 1.5 mils.

Abstract: Disclosed are wire assemblies for solar cells. One wire assembly includes a first polymer film and a second polymer film overlaying the first polymer film. The second polymer film has a wire embedded in it such that a surface of the wire that is facing away from the first polymer film is exposed. The gauge of the wire is about 36 to 46 gauge. The thickness of the second polymer film is about ¼ to ½ the diameter of the wire and about 0.5 to 1.5 mils.

Abstract: Provided are novel building integrable photovoltaic (BIP) modules having specially configured attachment structures for securing these modules to building structures and other BIP modules. In certain embodiments, a BIP module includes a base sheet supporting photovoltaic cells and having a rigid polymer portion and a flexible polymer portion. The flexible portion is designed to be penetrated with mechanical fasteners during installation. The flexible portion may include fastening pointers and/or through holes for identifying specific penetration locations. The rigid portion provides necessary structural rigidity and support to the module and more specifically to the photovoltaic cells. In certain other embodiments, a BIP module includes an adhesive bumper strip disposed along one edge of the module and configured for secure this module with respect to another module. During installation, the strip is positioned between a back sealing sheet of one module and a front sealing sheet of another module.

Abstract: Provided are novel building integrable photovoltaic (BIP) modules having specially configured attachment structures for securing these modules to building structures and other BIP modules. In certain embodiments, a BIP module includes a base sheet supporting photovoltaic cells and having a rigid polymer portion and a flexible polymer portion. The flexible portion is designed to be penetrated with mechanical fasteners during installation. The flexible portion may include fastening pointers and/or through holes for identifying specific penetration locations. The rigid portion provides necessary structural rigidity and support to the module and more specifically to the photovoltaic cells. In certain other embodiments, a BIP module includes an adhesive bumper strip disposed along one edge of the module and configured for secure this module with respect to another module. During installation, the strip is positioned between a back sealing sheet of one module and a front sealing sheet of another module.

Abstract: Disclosed are wire assemblies for solar cells. One wire assembly includes a first polymer film and a second polymer film overlaying the first polymer film. The second polymer film has a wire embedded in it such that a surface of the wire that is facing away from the first polymer film is exposed. The gauge of the wire is about 36 to 46 gauge. The thickness of the second polymer film is about ¼ to ½ the diameter of the wire and about 0.5 to 1.5 mils.

Abstract: Provided are novel solar modules including electrically isolated moisture barriers. According to various embodiments, the solar modules include two distinct seals: one to electrically isolate the moisture barrier and one to protect photovoltaic cells of the module. Also provided are novel back sheets for solar module encapsulation, and novel solar modules including such back sheets. According to various embodiments, the back sheets are ungrounded and flexible. In certain embodiments, the back sheets include an integrated flexible and electrically isolated moisture barrier. The electrically isolated moisture barrier may be a thin metallic sheet, e.g., an aluminum foil. The electrically isolated, flexible moisture barrier eliminates the need for grounding.

Abstract: Provided are novel back sheets for solar module encapsulation. According to various embodiments, the back sheets are ungrounded and flexible. In certain embodiments, the back sheets include an integrated flexible and electrically isolated moisture barrier. The electrically isolated moisture barrier may be a thin metallic sheet, e.g., an aluminum foil. The electrically isolated, flexible moisture barrier eliminates the need for grounding.

Abstract: Provided are novel back sheets for solar module encapsulation. According to various embodiments, the back sheets are ungrounded and flexible. In certain embodiments, the back sheets include an integrated flexible and electrically isolated moisture barrier. The electrically isolated moisture barrier may be a thin metallic sheet, e.g., an aluminum foil. The electrically isolated, flexible moisture barrier eliminates the need for grounding.

Abstract: Methods of depositing thin seed layers that improve continuity of the seed layer as well as adhesion to the barrier layer are provided. According to various embodiments, the methods involve performing an etchback operation in the seed deposition chamber prior to depositing the seed layer. The etch step removes barrier layer overhang and/or oxide that has formed on the barrier layer. It some embodiments, a small deposition flux of seed atoms accompanies the sputter etch flux of argon ions, embedding metal atoms into the barrier layer. The embedded metal atoms create nucleation sites for subsequent seed layer deposition, thereby promoting continuous seed layer film growth, film stability and improved seed layer-barrier layer adhesion.

Abstract: Methods and structures are provided for conformal lining of dual damascene structures in semiconductor devices that contain porous or low k dielectrics. Features, such as trenches and contact vias are formed in the dielectrics. The features are subjected to low-power plasma predeposition treatment to irregularities on the porous surfaces and/or reactively form an permeation barrier before a diffusion barrier material is deposited on the feature. The diffusion barrier may, for example, be deposited by CVD using metalorganic vapor reagents. The feature is then filled with copper metal and further processed to complete a dual damascene interconnect. The plasma predeposition treatment advantageously reduces the amount of permeation of the metalorganic reagent into the interlayer dielectric.

Abstract: Methods and structures are provided for conformal lining of dual damascene structures in semiconductor devices that contain porous or low k dielectrics. Features, such as trenches and contact vias are formed in the dielectrics. The features are subjected to low-power plasma predeposition treatment to irregularities on the porous surfaces and/or reactively form an permeation barrier before a diffusion barrier material is deposited on the feature. The diffusion barrier may, for example, be deposited by CVD using metalorganic vapor reagents. The feature is then filled with copper metal and further processed to complete a dual damascene interconnect. The plasma predeposition treatment advantageously reduces the amount of permeation of the metalorganic reagent into the interlayer dielectric.

Abstract: The present invention provides a method to improve adhesion of barrier, metal, dielectric interfaces. In the process flow, a first barrier material is formed on a dielectric layer and bombarded with a plasma to effectively push the barrier material into the dielectric interface while leaving a portion of the barrier material over the dielectric. A second barrier material, which may or may not be the same as the first barrier material, is then formed on the remaining first barrier material. Advantageously, the method of the present invention allows the barrier material to be pushed into the dielectric to insure excellent adhesion, which prevents chemical mechanical polishing delamination. Furthermore, the presence of the first barrier material on the sidewalls of via apertures through the dielectric can prevent Cu poisoning from sputtered Cu or CxOy.