Abstract: The present disclosure is directed to transparent infra-red (IR) reflective and/or low emissivity composite films which contain an ALD metal oxide based layer. Specific embodiments of the present disclosure are directed to an IR reflective composite film comprising: a transparent substrate layer comprising a polymer; one or more metal based layers; one or more silver based layers; one or more metal oxide based layers; and an ALD metal oxide based layer.

Abstract: An article comprising a polymeric substrate and at least one inorganic barrier layer, wherein the inorganic barrier layer has a stress not greater than about 400 MPa and a density of at least about 1.5 g/cm3. The article is preferably an optical device, such as an organic light emitting diode (OLED) or a photovoltaic (PV) module, wherein a silicon nitride barrier layer has been directly deposited on a flexible polymeric substrate via plasma enhanced chemical vapor deposition (PECVD).

Abstract: The present invention provides a method of making rare earth (RE) doped optical fiber using BaO as co-dopant instead of Al or P commonly used for incorporation of the RE in silica glass by MCVD and solution doping technique. The method comprises deposition of particulate layer of GeO2 doped SiO2 with or without small P2O5 for formation of the core and solution doping by soaking the porous soot layer into an aqueous solution of RE and Ba containing salt. This is followed by dehydration and sintering of the soaked deposit, collapsing at a high temperature to produce the preform and drawing of fibers of appropriate dimension. The use of Ba-oxide enables to eliminate unwanted core-clad interface defect which is common in case of Al doped fibers. The fibers also show good RE uniformity, relatively low optical loss in the 0.6-1.6 ?m wavelength region and good optical properties suitable for their application in amplifiers, fiber lasers and sensor devices.

Abstract: The present invention provides a method of making rare earth (RE) doped optical fiber using BaO as co-dopant instead of Al or P commonly used for incorporation of the RE in silica glass by MCVD and solution doping technique. The method comprises deposition of particulate layer of GeO2 doped SiO2 with or without small P2O5 for formation of the core and solution doping by soaking the porous soot layer into an aqueous solution of RE and Ba containing salt. This is followed by dehydration and sintering of the soaked deposit, collapsing at a high temperature to produce the preform and drawing of fibers of appropriate dimension. The use of Ba-oxide enables to eliminate unwanted core-clad interface defect which is common in case of Al doped fibers. The fibers also show good RE uniformity, relatively low optical loss in the 0.6-1.6 ?m wavelength region and good optical properties suitable for their application in amplifiers, fiber lasers and sensor devices.