Patents by Inventor Aniruddha B. Joshi
Aniruddha B. Joshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901243Abstract: Methods related to radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a method for fabricating an RF switching device can include: providing a semiconductor substrate; forming a plurality of field-effect transistors (FETs) on the semiconductor substrate such that the FETs have a non-uniform distribution of a parameter; and connecting the FETs to form a stack, such that the non-uniform distribution results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.Type: GrantFiled: June 21, 2021Date of Patent: February 13, 2024Assignee: Skyworks Solutions, Inc.Inventors: Guillaume Alexandre Blin, Aniruddha B. Joshi, Christophe Masse
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Publication number: 20230120462Abstract: A power amplifier system comprises an envelope tracker configured to generate a supply voltage that changes in relation to an envelope of a radio frequency signal, a power amplifier configured to amplify the radio frequency signal, and an adaptation circuit configured to adapt the supply voltage to provide operating power to the power amplifier. The adaptation circuit includes at least one Gallium Nitride field-effect-transistor configured to generate the operating power in response to an increased swing of the supply voltage and at least one linearizing circuit configured to linearize an operation of the Gallium Nitride field-effect-transistor.Type: ApplicationFiled: October 12, 2022Publication date: April 20, 2023Inventors: Florinel G. Balteanu, John Tzung-Yin Lee, Aniruddha B. Joshi
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Publication number: 20220013415Abstract: Radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.Type: ApplicationFiled: June 21, 2021Publication date: January 13, 2022Inventors: Guillaume Alexandre BLIN, Aniruddha B. JOSHI, Christophe MASSE
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Publication number: 20220013414Abstract: Methods related to radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a method for fabricating an RF switching device can include: providing a semiconductor substrate; forming a plurality of field-effect transistors (FETs) on the semiconductor substrate such that the FETs have a non-uniform distribution of a parameter; and connecting the FETs to form a stack, such that the non-uniform distribution results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.Type: ApplicationFiled: June 21, 2021Publication date: January 13, 2022Inventors: Guillaume Alexandre BLIN, Aniruddha B. JOSHI, Christophe MASSE
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Patent number: 11043432Abstract: Radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.Type: GrantFiled: November 5, 2014Date of Patent: June 22, 2021Assignee: Skyworks Solutions, Inc.Inventors: Guillaume Alexandre Blin, Aniruddha B. Joshi, Christophe Masse
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Patent number: 10950635Abstract: A transistor device includes a plurality of drain fingers that are elongate in a first dimension, a plurality of source fingers that are elongate in the first dimension and interleaved with the plurality of drain fingers, one or more drain contact bars extending over a first set of the plurality of drain fingers and a first set of the plurality of source fingers in a second dimension that is orthogonal to the first dimension, and one or more source contact bars extending over a second set of the plurality of drain fingers and a second set of the plurality of source fingers in the second dimension.Type: GrantFiled: November 7, 2018Date of Patent: March 16, 2021Assignee: Skyworks Solutions, Inc.Inventors: Tzung-Yin Lee, Aniruddha B. Joshi, David Scott Whitefield, Maureen Rosenberg Brongo
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Patent number: 10580705Abstract: Devices and methods related to radio-frequency (RF) switches having improved on-resistance performance. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first ON-resistance (Ron) value that is less than a second Ron value corresponding to a similar stack having a substantially uniform distribution of the parameter.Type: GrantFiled: December 5, 2017Date of Patent: March 3, 2020Assignee: Skyworks Solutions, Inc.Inventors: Guillaume Alexandre Blin, Christophe Masse, Aniruddha B. Joshi
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Publication number: 20190074300Abstract: A transistor device includes a plurality of drain fingers that are elongate in a first dimension, a plurality of source fingers that are elongate in the first dimension and interleaved with the plurality of drain fingers, one or more drain contact bars extending over a first set of the plurality of drain fingers and a first set of the plurality of source fingers in a second dimension that is orthogonal to the first dimension, and one or more source contact bars extending over a second set of the plurality of drain fingers and a second set of the plurality of source fingers in the second dimension.Type: ApplicationFiled: November 7, 2018Publication date: March 7, 2019Inventors: Tzung-Yin LEE, Aniruddha B. JOSHI, David Scott WHITEFIELD, Maureen Rosenberg BRONGO
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Patent number: 10153306Abstract: A radio-frequency (RF) device includes a semiconductor substrate, a first field-effect transistor (FET) disposed on the substrate, the first FET having a first plurality of drain fingers, and a second FET connected in series with the first FET along a first dimension, the second FET having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.Type: GrantFiled: February 27, 2017Date of Patent: December 11, 2018Assignee: Skyworks Solutions, Inc.Inventors: Tzung-Yin Lee, Aniruddha B. Joshi, David Scott Whitefield, Maureen Rosenberg Brongo
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Publication number: 20180144993Abstract: Devices and methods related to radio-frequency (RF) switches having improved on-resistance performance. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first ON-resistance (Ron) value that is less than a second Ron value corresponding to a similar stack having a substantially uniform distribution of the parameter.Type: ApplicationFiled: December 5, 2017Publication date: May 24, 2018Inventors: Guillaume Alexandre BLIN, Christophe MASSE, Aniruddha B. JOSHI
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Patent number: 9837324Abstract: Devices and methods related to radio-frequency (RF) switches having improved on-resistance performance. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first ON-resistance (Ron) value that is less than a second Ron value corresponding to a similar stack having a substantially uniform distribution of the parameter.Type: GrantFiled: November 5, 2014Date of Patent: December 5, 2017Assignee: Skyworks Solutions, Inc.Inventors: Guillaume Alexandre Blin, Christophe Masse, Aniruddha B. Joshi
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Publication number: 20170250200Abstract: A radio-frequency (RF) device includes a semiconductor substrate, a first field-effect transistor (FET) disposed on the substrate, the first FET having a first plurality of drain fingers, and a second FET connected in series with the first FET along a first dimension, the second FET having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.Type: ApplicationFiled: February 27, 2017Publication date: August 31, 2017Inventors: Tzung-Yin LEE, Aniruddha B. JOSHI, David Scott WHITEFIELD, Maureen Rosenberg BRONGO
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Patent number: 9620424Abstract: Improved linearity performance for radio-frequency (RF) switches. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first linearity performance that is better than a second linearity performance corresponding to a similar stack having a substantially uniform distribution of the parameter.Type: GrantFiled: November 5, 2014Date of Patent: April 11, 2017Assignee: Skyworks Solutions, Inc.Inventors: Guillaume Alexandre Blin, Aniruddha B. Joshi, Christophe Masse
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Publication number: 20150171109Abstract: Devices and methods related to radio-frequency (RF) switches having improved on-resistance performance. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first ON-resistance (Ron) value that is less than a second Ron value corresponding to a similar stack having a substantially uniform distribution of the parameter.Type: ApplicationFiled: November 5, 2014Publication date: June 18, 2015Inventors: Guillaume Alexandre BLIN, Christophe MASSE, Aniruddha B. JOSHI
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Publication number: 20150171898Abstract: Improved linearity performance for radio-frequency (RF) switches. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first linearity performance that is better than a second linearity performance corresponding to a similar stack having a substantially uniform distribution of the parameter.Type: ApplicationFiled: November 5, 2014Publication date: June 18, 2015Inventors: Guillaume Alexandre BLIN, Aniruddha B. JOSHI, Christophe MASSE
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Publication number: 20150171108Abstract: Radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.Type: ApplicationFiled: November 5, 2014Publication date: June 18, 2015Inventors: Guillaume Alexandre BLIN, Aniruddha B. JOSHI, Christophe MASSE
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Patent number: 7260058Abstract: A method for resolving primary section mismatch at a local node coupled to a remote node with two working sections is disclosed. A first working section is initially identified as the primary section and a second working section is initially identified as the secondary section. The primary section supports network traffic and the secondary section operates as a backup for the primary section. The method includes receiving a status indication change of the working section identified as the primary section at the local node and switching the primary section to the second working section at the local node. A timer is started upon switching the primary section to the second working section at the local node and the primary section is switched back to the first working section at the local node after the timer expires if the other node has not switched its primary section.Type: GrantFiled: December 4, 2002Date of Patent: August 21, 2007Assignee: Cisco Technology, Inc.Inventors: Aniruddha B. Joshi, Rahul Dasgupta