Patents by Inventor Aniruddha JOI
Aniruddha JOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984354Abstract: A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles; wherein the method forms a zinc-containing barrier layer at an interface between the metallic liner and the dielectric.Type: GrantFiled: June 28, 2019Date of Patent: May 14, 2024Assignee: Lam Research CorporationInventors: Aniruddha Joi, Dries Dictus, Yezdi Dordi
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Publication number: 20240120209Abstract: A method for etching a stack is described. The method includes etching a first nitrogen-containing layer of the stack by applying a non-metal gas and discontinuing the application of the non-metal gas upon determining that a first oxide layer is reached. The first oxide layer is under the first nitrogen-containing layer. The method further includes etching the first oxide layer by applying a metal-containing gas. The application of the metal-containing gas is discontinued upon determining that a second nitrogen-containing layer will be reached. The second nitrogen-containing layer is situated under the first oxide layer. The method includes etching the second nitrogen-containing layer by applying the non-metal gas.Type: ApplicationFiled: December 22, 2021Publication date: April 11, 2024Inventors: Nikhil Dole, Takumi Yanagawa, Eric A. Hudson, Merrett Wong, Aniruddha Joi
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Publication number: 20240120205Abstract: A method for performing an etch process on a substrate includes applying a bias signal and a source signal to an electrode of a plasma processing system. The bias signal and the source signal are pulsed RF signals that together define a repeated pulsed RF cycle, wherein each pulsed RF cycle sequentially includes a first state, a second state, a third state, and a fourth state. The power level of the bias signal in the first state is greater than in the third state, which is greater than in the second state, which is greater than in the fourth state. The power level of the source signal in the first state is greater than in the third state, which is greater than in the second state, which is greater than in the fourth state.Type: ApplicationFiled: June 16, 2022Publication date: April 11, 2024Inventors: Aniruddha Joi, Nikhil Dole, Merrett Wong, Eric Hudson, Jay Sheth
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Publication number: 20220415819Abstract: A metal interconnect structure is doped with zinc, indium, or gallium using top-down doping processes to improve diffusion barrier properties with minimal impact on line resistance. Dopant is introduced prior to metallization or after metallization. Dopant may be introduced by chemical vapor deposition on a liner layer at an elevated temperature prior to metallization, by chemical vapor deposition on a metal feature at an elevated temperature after metallization, or by electroless deposition on a copper feature after metallization. Application of elevated temperatures causes the metal interconnect structure to be doped and form a self-formed barrier layer or strengthen an existing diffusion barrier layer.Type: ApplicationFiled: November 20, 2020Publication date: December 29, 2022Inventors: Aniruddha JOI, Dries DICTUS, Yezdi DORDI
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Patent number: 11424158Abstract: A method comprises depositing a barrier layer on a dielectric layer to prevent oxidation of a metal layer to be deposited by electroplating due to an oxide present in the dielectric layer and depositing a doped liner layer on the barrier layer to bond with the metal layer to be deposited on the liner layer by the electroplating. The dopant forms a protective passivation layer on a surface of the liner layer and dissolves during the electroplating so that the metal layer deposited on the liner layer by the electroplating bonds with the liner layer. The dopant reacts with the dielectric layer and forms a layer of a compound between the barrier layer and the dielectric layer. The compound layer prevents oxidation of the barrier layer and the liner layer due to the oxide present in the dielectric layer and adheres the barrier layer to the dielectric layer.Type: GrantFiled: August 4, 2020Date of Patent: August 23, 2022Assignee: LAM RESEARCH CORPORATIONInventors: Yezdi N. Dordi, Aniruddha Joi, Steven James Madsen, Dries Dictus
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Patent number: 11225714Abstract: A method is provided, including the following operations: depositing a liner in a feature of a substrate; depositing a monolayer of zinc over the liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.Type: GrantFiled: October 31, 2019Date of Patent: January 18, 2022Assignee: Lam Research CorporationInventors: Kailash Venkatraman, Yezdi Dordi, Aniruddha Joi
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Publication number: 20210166971Abstract: A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles; wherein the method forms a zinc-containing barrier layer at an interface between the metallic liner and the dielectric.Type: ApplicationFiled: June 28, 2019Publication date: June 3, 2021Inventors: Aniruddha Joi, Dries Dictus, Yezdi Dordi
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Publication number: 20200365453Abstract: A method comprises depositing a barrier layer on a dielectric layer to prevent oxidation of a metal layer to be deposited by electroplating due to an oxide present in the dielectric layer and depositing a doped liner layer on the barrier layer to bond with the metal layer to be deposited on the liner layer by the electroplating. The dopant forms a protective passivation layer on a surface of the liner layer and dissolves during the electroplating so that the metal layer deposited on the liner layer by the electroplating bonds with the liner layer. The dopant reacts with the dielectric layer and forms a layer of a compound between the barrier layer and the dielectric layer. The compound layer prevents oxidation of the barrier layer and the liner layer due to the oxide present in the dielectric layer and adheres the barrier layer to the dielectric layer.Type: ApplicationFiled: August 4, 2020Publication date: November 19, 2020Inventors: Yezdi N. Dordi, Aniruddha Joi, Steven James Madsen, Dries Dictus
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Patent number: 10741440Abstract: A method comprises depositing a barrier layer on a dielectric layer to prevent oxidation of a metal layer to be deposited by electroplating due to an oxide present in the dielectric layer and depositing a doped liner layer on the barrier layer to bond with the metal layer to be deposited on the liner layer by the electroplating. The dopant forms a protective passivation layer on a surface of the liner layer and dissolves during the electroplating so that the metal layer deposited on the liner layer by the electroplating bonds with the liner layer. The dopant reacts with the dielectric layer and forms a layer of a compound between the barrier layer and the dielectric layer. The compound layer prevents oxidation of the barrier layer and the liner layer due to the oxide present in the dielectric layer and adheres the barrier layer to the dielectric layer.Type: GrantFiled: June 5, 2018Date of Patent: August 11, 2020Assignee: Lam Research CorporationInventors: Yezdi N. Dordi, Aniruddha Joi, Steven James Madsen, Dries Dictus
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Patent number: 10640874Abstract: A method of performing electroless electrochemical atomic layer deposition is provided and includes: providing a substrate including an exposed upper metal layer; exposing the substrate to a first precursor solution to create a sacrificial metal monolayer on the exposed upper metal layer via underpotential deposition, where the first precursor solution is an aqueous solution including a reducing agent; subsequent to the forming of the sacrificial metal monolayer, rinsing the substrate; subsequent to the rinsing of the substrate, exposing the substrate to a second precursor solution to replace the sacrificial metal monolayer with a first deposition layer; and subsequent to replacing the sacrificial metal monolayer with the first deposition layer, rinsing the substrate. The exposure of the substrate to the first precursor solution and the exposure of the substrate to the second precursor solution are electroless processes.Type: GrantFiled: August 3, 2018Date of Patent: May 5, 2020Assignee: LAM RESEARCH CORPORATIONInventors: Aniruddha Joi, Kailash Venkatraman, Yezdi Dordi
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Publication number: 20200063256Abstract: A method is provided, including the following operations: depositing a liner in a feature of a substrate; depositing a monolayer of zinc over the liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.Type: ApplicationFiled: October 31, 2019Publication date: February 27, 2020Inventors: Kailash Venkatraman, Yezdi Dordi, Aniruddha Joi
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Patent number: 10508351Abstract: Layer-by-layer thickness control of an electroplated film can be achieved by using a cyclic deposition process. The cyclic process involves forming a layer (or partial layer) of hydrogen on a surface of the substrate, then displacing the layer of hydrogen with a layer of metal. These steps are repeated a number of times to deposit the metal film to a desired thickness. Each step in the cycle is self-limiting, thereby enabling atomic level thickness control.Type: GrantFiled: March 6, 2018Date of Patent: December 17, 2019Assignee: Lam Research CorporationInventors: Aniruddha Joi, Yezdi Dordi
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Patent number: 10501846Abstract: A method is provided, including the following operations: depositing a ruthenium liner in a feature of a substrate; depositing a monolayer of zinc over the ruthenium liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the ruthenium liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the ruthenium liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.Type: GrantFiled: September 11, 2017Date of Patent: December 10, 2019Assignee: Lam Research CorporationInventors: Kailash Venkatraman, Yezdi Dordi, Aniruddha Joi
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Publication number: 20190371659Abstract: A method comprises depositing a barrier layer on a dielectric layer to prevent oxidation of a metal layer to be deposited by electroplating due to an oxide present in the dielectric layer and depositing a doped liner layer on the barrier layer to bond with the metal layer to be deposited on the liner layer by the electroplating. The dopant forms a protective passivation layer on a surface of the liner layer and dissolves during the electroplating so that the metal layer deposited on the liner layer by the electroplating bonds with the liner layer. The dopant reacts with the dielectric layer and forms a layer of a compound between the barrier layer and the dielectric layer. The compound layer prevents oxidation of the barrier layer and the liner layer due to the oxide present in the dielectric layer and adheres the barrier layer to the dielectric layer.Type: ApplicationFiled: June 5, 2018Publication date: December 5, 2019Inventors: Yezdi N. DORDI, Aniruddha JOI, Steven James MADSEN, Dries DICTUS
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Patent number: 10483163Abstract: A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process configured to deposit a ruthenium layer in a feature on the substrate, the ruthenium layer being doped with zinc at an atomic percentage less than approximately 30 percent; after depositing the ruthenium layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the ruthenium layer and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the ruthenium layer.Type: GrantFiled: December 11, 2018Date of Patent: November 19, 2019Assignee: Lam Research CorporationInventors: Aniruddha Joi, Yezdi Dordi
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Publication number: 20190122922Abstract: A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process configured to deposit a ruthenium layer in a feature on the substrate, the ruthenium layer being doped with zinc at an atomic percentage less than approximately 30 percent; after depositing the ruthenium layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the ruthenium layer and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the ruthenium layer.Type: ApplicationFiled: December 11, 2018Publication date: April 25, 2019Inventors: Aniruddha Joi, Yezdi Dordi
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Publication number: 20190078202Abstract: A method is provided, including the following operations: depositing a ruthenium liner in a feature of a substrate; depositing a monolayer of zinc over the ruthenium liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the ruthenium liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the ruthenium liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.Type: ApplicationFiled: September 11, 2017Publication date: March 14, 2019Inventors: Kailash Venkatraman, Yezdi Dordi, Aniruddha Joi
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Publication number: 20190048472Abstract: A method of performing electroless electrochemical atomic layer deposition is provided and includes: providing a substrate including an exposed upper metal layer; exposing the substrate to a first precursor solution to create a sacrificial metal monolayer on the exposed upper metal layer via underpotential deposition, where the first precursor solution is an aqueous solution including a reducing agent; subsequent to the forming of the sacrificial metal monolayer, rinsing the substrate; subsequent to the rinsing of the substrate, exposing the substrate to a second precursor solution to replace the sacrificial metal monolayer with a first deposition layer; and subsequent to replacing the sacrificial metal monolayer with the first deposition layer, rinsing the substrate. The exposure of the substrate to the first precursor solution and the exposure of the substrate to the second precursor solution are electroless processes.Type: ApplicationFiled: August 3, 2018Publication date: February 14, 2019Inventors: Aniruddha Joi, Kailash Venkatraman, Yezdi Dordi
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Publication number: 20180374747Abstract: A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process configured to deposit a copper layer in a feature on the substrate, the copper layer being doped with zinc at an atomic percentage less than approximately 30 percent; after depositing the copper layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the copper layer and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the copper layer.Type: ApplicationFiled: June 27, 2017Publication date: December 27, 2018Inventors: Aniruddha Joi, Yezdi Dordi
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Patent number: 10163695Abstract: A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process configured to deposit a copper layer in a feature on the substrate, the copper layer being doped with zinc at an atomic percentage less than approximately 30 percent; after depositing the copper layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the copper layer and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the copper layer.Type: GrantFiled: June 27, 2017Date of Patent: December 25, 2018Assignee: Lam Research CorporationInventors: Aniruddha Joi, Yezdi Dordi