Abstract: The design, fabrication, post-processing and characterization of a novel SAW (Surface Acoustic Wave) based bio/chemical sensor in CMOS technology is introduced. The sensors are designed in AMI 1.5 ?m 2 metal, 2 poly process. A unique maskless post processing sequence is designed and completed. The three post-processing steps are fully compatible with any CMOS technology. This allows any signal control/processing circuitry to be easily integrated on the same chip. ZnO is used as the piezoelectric material for the SAW generation. A thorough characterization and patterning optimization of the sputtered ZnO was carried out. The major novelties that are introduced in the SAW delay line features are: The embedded heater elements for temperature control, compensation and acoustic absorbers that are designed to eliminate edge reflections and minimize triple transit interference. Both of these attributes are designed by using the CMOS layers without disturbing the SAW performance.

Abstract: A biosensor device (1) providing an analysis platform for detecting cell growth, comprising of an aluminium nitride (AlN) base (2), a shear horizontal-surface acoustic wave (SH-SAW) resonator including an input transducer (4) and an output transducer (5) symmetrically positioned on the aluminum nitride (AlN) base (2), a counter electrode (6) positioned parallel to working electrodes (7) on the aluminum nitride (AlN) base (2), for transmitting frequency voltage towards the living cell (3), a plurality of working electrodes (7) positioned beneath the living cell (3) on the aluminium nitride (AlN) base (2) for receiving frequency voltage from the living cell (3), an impedance analyzer (8) for receiving impedance readings from the counter electrode (6) and working electrodes (7), and a back-etched silicon substrate (9) coupled to the aluminium nitride (AlN) base (2), for reducing current loss, wherein the living cell (3) is positioned in between of the input transducer and output transducer on the aluminium nitri

Abstract: A biosensor device (1) providing an analysis platform for detecting cell growth, comprising of an aluminium nitride (AlN) base (2), a shear horizontal-surface acoustic wave (SH-SAW) resonator including an input transducer (4) and an output transducer (5) symmetrically positioned on the aluminum nitride (AlN) base (2), a counter electrode (6) positioned parallel to working electrodes (7) on the aluminum nitride (AlN) base (2), for transmitting frequency voltage towards the living cell (3), a plurality of working electrodes (7) positioned beneath the living cell (3) on the aluminium nitride (AlN) base (2) for receiving frequency voltage from the living cell (3), an impedance analyzer (8) for receiving impedance readings from the counter electrode (6) and working electrodes (7), and a back-etched silicon substrate (9) coupled to the aluminium nitride (AlN) base (2), for reducing current loss, wherein the living cell (3) is positioned in between of the input transducer and output transducer on the aluminium nitri

Abstract: A radio frequency (RF) micro electromechanical system (MEMS) switch formed on a substrate (e.g., a CMOS substrate). The RF MEMS switch includes a micromechanical member including a flexible switch membrane configured to move between an on state and an off state of the RF MEMS switch. The flexible switch membrane includes a first set of fingers on a sidewall thereof to be vertically coupled with a second set of fingers formed at an output of the RF MEMS switch on the substrate, and an actuation member in operable communication with the micromechanical member and configured to thermally actuate the micromechanical member such that the first set of fingers electrically couple with the second set of fingers upon thermal actuation of the micromechanical member to enable transmission of an RF signal.

Abstract: An improved SAW resonator fabricated using RF-CMOS technology is disclosed. The SAW resonator is capable of a resonant frequency of from about 1 GHz to about 3.12 GHz. Several different embodiments namely both single and double port resonators implemented in standard CMOS (0.6 ?m) and RF-CMOS (0.18 ?m) technologies are presented.