Patents by Inventor Anjana M. Patel

Anjana M. Patel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220165567
    Abstract: Exemplary semiconductor processing systems may include a chamber body comprising sidewalls and a base. The systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen and a stem. The systems may include a baffle extending about a stem of the substrate support. The baffle may define one or more apertures through the baffle. The systems may include a fluid source fluidly coupled with the chamber body at an access between the stem of the substrate support and the baffle.
    Type: Application
    Filed: November 25, 2020
    Publication date: May 26, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Abdul Aziz Khaja, Anjana M. Patel
  • Publication number: 20210143005
    Abstract: Embodiments described herein generally relate to apparatuses for processing a substrate. In one or more embodiments, a heater support kit includes a heater assembly contains a heater plate having an upper surface and a lower surface, a chuck ring disposed on at least a portion of the upper surface of the heater plate, a heater arm assembly contains a heater arm and supporting the heater assembly, and a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate.
    Type: Application
    Filed: December 17, 2020
    Publication date: May 13, 2021
    Inventors: Tuan Anh NGUYEN, Jeongmin LEE, Anjana M. PATEL, Abdul Aziz KHAJA
  • Patent number: 10903066
    Abstract: Embodiments described herein generally relate to apparatuses for processing a substrate. In one or more embodiments, a heater support kit includes a heater assembly contains a heater plate having an upper surface and a lower surface, a chuck ring disposed on at least a portion of the upper surface of the heater plate, a heater arm assembly contains a heater arm and supporting the heater assembly, and a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: January 26, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Tuan Anh Nguyen, Jeongmin Lee, Anjana M. Patel, Abdul Aziz Khaja
  • Publication number: 20200362457
    Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.
    Type: Application
    Filed: April 24, 2020
    Publication date: November 19, 2020
    Inventors: Liangfa HU, Prashant Kumar KULSHRESHTHA, Anjana M. PATEL, Abdul Aziz KHAJA, Viren KALSEKAR, Vinay K. PRABHAKAR, Satya Teja Babu THOKACHICHU, Byung Seok KWON, Ratsamee LIMDULPAIBOON, Kwangduk Douglas LEE, Ganesh BALASUBRAMANIAN
  • Patent number: 10755903
    Abstract: A method of cleaning a remote plasma source includes supplying a first cycle of one or more first cleaning gases to a remote plasma source. The method includes supplying a second cycle of one or more second cleaning gases to the remote plasma source. The method includes supplying one or more cooling fluids to one or more cooling conduits coupled with the remote plasma source.
    Type: Grant
    Filed: January 4, 2017
    Date of Patent: August 25, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Sidharth Bhatia, Zhili Zuo, Hidehiro Kojiri, Anjana M. Patel, Song-Moon Suh, Ganesh Balasubramanian
  • Publication number: 20190272991
    Abstract: Embodiments described herein generally relate to apparatuses for processing a substrate. In one or more embodiments, a heater support kit includes a heater assembly contains a heater plate having an upper surface and a lower surface, a chuck ring disposed on at least a portion of the upper surface of the heater plate, a heater arm assembly contains a heater arm and supporting the heater assembly, and a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate.
    Type: Application
    Filed: May 22, 2019
    Publication date: September 5, 2019
    Inventors: Tuan Anh NGUYEN, Jeongmin LEE, Anjana M. PATEL, Abdul Aziz KHAJA
  • Publication number: 20170207069
    Abstract: A method of cleaning a remote plasma source includes supplying a first cycle of one or more first cleaning gases to a remote plasma source. The method includes supplying a second cycle of one or more second cleaning gases to the remote plasma source. The method includes supplying one or more cooling fluids to one or more cooling conduits coupled with the remote plasma source.
    Type: Application
    Filed: January 4, 2017
    Publication date: July 20, 2017
    Inventors: Sidharth BHATIA, Zhili ZUO, Hidehiro KOJIRI, Anjana M. PATEL, Song-Moon SUH, Ganesh BALASUBRAMANIAN
  • Patent number: 9589773
    Abstract: Embodiments described herein relate to methods for determining a cleaning endpoint. A first plasma cleaning process may be performed in a clean chamber environment to determine a clean time function defined by a first slope. A second plasma cleaning process may be performed in an unclean chamber environment to determine a clean time function defined by a second slope. The first and second slope may be compared to determine a clean endpoint time.
    Type: Grant
    Filed: April 22, 2016
    Date of Patent: March 7, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sidharth Bhatia, Anjana M. Patel, Abdul Aziz Khaja
  • Publication number: 20160314944
    Abstract: Embodiments described herein relate to methods for determining a cleaning endpoint. A first plasma cleaning process may be performed in a clean chamber environment to determine a clean time function defined by a first slope. A second plasma cleaning process may be performed in an unclean chamber environment to determine a clean time function defined by a second slope. The first and second slope may be compared to determine a clean endpoint time.
    Type: Application
    Filed: April 22, 2016
    Publication date: October 27, 2016
    Inventors: Sidharth BHATIA, Anjana M. PATEL, Abdul Aziz KHAJA
  • Patent number: 8445078
    Abstract: A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The polysilazane film is converted to silicon oxide by exposing the polysilazane film to humidity at low substrate temperature. The polysilazane film may also be dipped in a liquid having both oxygen and hydrogen, such as water, hydrogen peroxide and or ammonium hydroxide. These conversion techniques may be used separately or in a sequential combination. Conversion techniques described herein hasten conversion, produce manufacturing-worthy films and remove the requirement of a high temperature oxidation treatment. An ozone treatment may precede the conversion technique(s).
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: May 21, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Jingmei Liang, Nitin K. Ingle, Sukwon Hong, Anjana M. Patel
  • Publication number: 20120269989
    Abstract: A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The polysilazane film is converted to silicon oxide by exposing the polysilazane film to humidity at low substrate temperature. The polysilazane film may also be dipped in a liquid having both oxygen and hydrogen, such as water, hydrogen peroxide and or ammonium hydroxide. These conversion techniques may be used separately or in a sequential combination. Conversion techniques described herein hasten conversion, produce manufacturing-worthy films and remove the requirement of a high temperature oxidation treatment. An ozone treatment may precede the conversion technique(s).
    Type: Application
    Filed: September 20, 2011
    Publication date: October 25, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Jingmei Liang, Nitin K. Ingle, Sukwon Hong, Anjana M. Patel
  • Patent number: 7967913
    Abstract: A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr.
    Type: Grant
    Filed: July 23, 2009
    Date of Patent: June 28, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Zhong Qiang Hua, Sanjay Kamath, Young S. Lee, Ellie Y. Yieh, Hien-Minh Huu Le, Anjana M. Patel, Sudhir R. Gondhalekar
  • Patent number: 7935643
    Abstract: The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves the formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.
    Type: Grant
    Filed: October 22, 2009
    Date of Patent: May 3, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Jingmei Liang, Anjana M. Patel, Nitin K. Ingle, Shankar Venkataraman
  • Publication number: 20110034035
    Abstract: The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves the formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.
    Type: Application
    Filed: October 22, 2009
    Publication date: February 10, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Jingmei Liang, Anjana M. Patel, Nitin K. Ingle, Shankar Venkataraman
  • Publication number: 20100095979
    Abstract: A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr.
    Type: Application
    Filed: July 23, 2009
    Publication date: April 22, 2010
    Applicant: Applied Materials, Inc.
    Inventors: Zhong Qiang Hua, Sanjay Kamath, Young S. Lee, Ellie Y. Yieh, Hien-Minh Huu Le, Anjana M. Patel, Sudhir R. Gondhalekar
  • Patent number: 7628897
    Abstract: A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.
    Type: Grant
    Filed: September 12, 2003
    Date of Patent: December 8, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Hemant P. Mungekar, Anjana M. Patel, Manoj Vellaikal, Anchuan Wang, Bikram Kapoor
  • Publication number: 20040079728
    Abstract: A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.
    Type: Application
    Filed: September 12, 2003
    Publication date: April 29, 2004
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Hemant P. Mungekar, Anjana M. Patel, Manoj Vellaikal, Anchuan Wang, Bikram Kapoor