Patents by Inventor Anjaneya Modak

Anjaneya Modak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a semiconductor device with aluminum capped copper interconnect pads
    Patent number: 6537913
    Abstract: A method for making a semiconductor device is described. That method includes forming a dielectric layer on a substrate, then etching a trench into the dielectric layer. After filling the trench with copper, a portion of the copper is removed to form a recessed copper plug within the dielectric layer. A capping layer that comprises aluminum is then formed on the recessed copper plug.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: March 25, 2003
    Assignee: Intel Corporation
    Inventor: Anjaneya Modak
  • METHOD OF MAKING A SEMICONDUCTOR DEVICE WITH ALUMINUM CAPPED COPPER INTERCONNECT PADS
    Publication number: 20030003711
    Abstract: A method for making a semiconductor device is described. That method includes forming a dielectric layer on a substrate, then etching a trench into the dielectric layer. After filling the trench with copper, a portion of the copper is removed to form a recessed copper plug within the dielectric layer. A capping layer that comprises aluminum is then formed on the recessed copper plug.
    Type: Application
    Filed: June 29, 2001
    Publication date: January 2, 2003
    Inventor: Anjaneya Modak
  • Method of making a semiconductor device that includes a dual damascene interconnect
    Publication number: 20030003710
    Abstract: An improved method for making a semiconductor device is described. That method includes forming a first dielectric layer on a substrate, then etching a trench into the first dielectric layer. After filling the trench with a conductive material, a portion of the conductive material is removed to form a recessed conductive layer within the first dielectric layer. An upper barrier layer that comprises tantalum nitride and tantalum is then formed on the recessed conductive layer.
    Type: Application
    Filed: June 29, 2001
    Publication date: January 2, 2003
    Inventor: Anjaneya Modak