Patents by Inventor Anke Luedge

Anke Luedge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer
    Patent number: 8337615
    Abstract: A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.
    Type: Grant
    Filed: April 4, 2006
    Date of Patent: December 25, 2012
    Assignee: PV Silicon Forschungs und Produktions GmbH
    Inventors: Nikolai Abrosimov, Anke Luedge, Andris Muiznieks, Helge Riemann
  • METHOD FOR PRODUCING A MONOCRYSTALLINE SI WAFER HAVING AN APPROXIMATELY POLYGONAL CROSS-SECTION AND CORRESPONDING MONOCRYSTALLINE SI WAFER
    Publication number: 20090068407
    Abstract: A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.
    Type: Application
    Filed: April 4, 2006
    Publication date: March 12, 2009
    Applicant: PV Silicon Forschungs-und Produktions AG
    Inventors: Nikolai Abrosimov, Anke Luedge, Andris Muiznieks, Helge Riemann