Abstract: A request including audio data is received from a voice-enabled device. A string of phonemes present in the utterance is determined through speech recognition. At a later time, a subsequent user input corresponding to the request may be received, in which the user input is associated with one or more text keywords. The subsequent user input may be obtained in response to an active request. Alternatively, feedback may not be actively elicited, but rather collected passively. However it is obtained, the one or more keywords associated with the subsequent user input may be associated with the string of phonemes to indicate that the user is saying or mean those words when they product that string of phonemes. A user-specific speech recognition key for the user account is then updated to associate the string of phonemes with these words. A general speech recognition model can also be trained using the association.

Abstract: A delay independent differential hysteresis receiver. The differential hysteresis receiver uses two parallel paths in a first receiver stage, each path having a comparator with a dedicated offset on the complimentary inputs. A second receiver stage includes a hold circuit that brings the two parallel paths of the first receiver stage together to form a receiver hysteresis output.

Abstract: In various embodiments, the present disclosure provides low-voltage differential signaling (LVDS) receiver circuits, electronic devices, and methods. In one embodiment, a LVDS receiver includes an input differential pair of transistors that receive a differential input signal. The input differential pair includes a first NMOS transistor that receives a first input signal and a second NMOS transistor that receives a second input signal. A third NMOS transistor has source and drain terminals respectively coupled to source and drain terminals of the first NMOS transistor, and a fourth NMOS transistor has source and drain terminals respectively coupled to source and drain terminals of the second NMOS transistor. A first level shifter is coupled to a gate of the third NMOS transistor, and a second level shifter is coupled to a gate of the fourth NMOS transistor.

Abstract: Systems and methods include a predictor module configured to receive an input, e.g., composition parameters and processing parameters. A processor processes the input to predict a material property, e.g., fatigue strength, of an alloy based on the input. The processor outputs the predicted fatigue strength of the alloy for display.

Abstract: Circuit module designs that incorporate dual gate field effect transistors are implemented with fully depleted silicon-on-insulator (FD-SOI) technology. Lowering the threshold voltages of the transistors can be accomplished through dynamic secondary gate control in which a back-biasing technique is used to operate the dual gate FD-SOI transistors with enhanced switching performance. Consequently, such transistors can operate at very low core voltage supply levels, down to as low as about 0.4 V, which allows the transistors to respond quickly and to switch at higher speeds. Performance improvements are shown in circuit simulations of an inverter, an amplifier, a level shifter, and a voltage detection circuit module.

Abstract: Systems and methods include a predictor module configured to receive an input, e.g., composition parameters and processing parameters. A processor processes the input to predict a material property, e.g., fatigue strength, of an alloy based on the input. The processor outputs the predicted fatigue strength of the alloy for display.

Abstract: A CMOS device is formed in an FDSOI integrated circuit die. By retrieving the MOS functionality for gate voltage levels higher than its stress limits, second gate availability in these devices is being used, and hence removing the additional circuitry that would have been used for protecting the devices from such stress. Implementation in an inverter includes a PMOS transistor and an NMOS transistor. The PMOS and NMOS transistors each include a first gate coupled to the respective source terminal of the transistor. The PMOS and NMOS transistors each include a back gate coupled to the input of the inverter.

Abstract: A CMOS device is formed in an FDSOI integrated circuit die. By retrieving the MOS functionality for gate voltage levels higher than its stress limits, second gate availability in these devices is being used, and hence removing the additional circuitry that would have been used for protecting the devices from such stress. Implementation in an inverter includes a PMOS transistor and an NMOS transistor. The PMOS and NMOS transistors each include a first gate coupled to the respective source terminal of the transistor. The PMOS and NMOS transistors each include a back gate coupled to the input of the inverter.

Abstract: An inverter is implemented in an FDSOI integrated circuit die. The inverter includes a PMOS transistor and an NMOS transistor. The PMOS and NMOS transistors each include a first gate coupled to the respective source terminal of the transistor. The PMOS and NMOS transistors each include a back gate coupled to the input of the inverter.

Abstract: Circuit module designs that incorporate dual gate field effect transistors are implemented with fully depleted silicon-on-insulator (FD-SOI) technology. Lowering the threshold voltages of the transistors can be accomplished through dynamic secondary gate control in which a back-biasing technique is used to operate the dual gate FD-SOI transistors with enhanced switching performance. Consequently, such transistors can operate at very low core voltage supply levels, down to as low as about 0.4 V, which allows the transistors to respond quickly and to switch at higher speeds. Performance improvements are shown in circuit simulations of an inverter, an amplifier, a level shifter, and a voltage detection circuit module.

Abstract: A level shifter circuit is implemented with dual gate fully depleted silicon-on-insulator (FDSOI) technology. By enhancing the performance of the NMOS and devices within the level shifting circuit, the Vt of the dual gate FDSOI NMOS transistors is lowered without a need for additional control circuitry. Lowering the Vt can be accomplished through dynamic secondary gate control, by coupling together primary and secondary gates of the NMOS devices, while secondary gates of the PMOS devices can be coupled to a high voltage supply level. Such high performance NMOS devices can then operate at higher frequencies and run on a much wider range of core power supplies. Meanwhile, conventional DC conditions are maintained during steady state operation. Because no components are added to the level shifter circuit, the higher performance is achieved without an increase in size and current consumption.

Abstract: An inverter is implemented in an FDSOI integrated circuit die. The inverter includes a PMOS transistor and an NMOS transistor. The PMOS and NMOS transistors each include a first gate coupled to the respective source terminal of the transistor. The PMOS and NMOS transistors each include a back gate coupled to the input of the inverter.

Abstract: A level shifter circuit is implemented with dual gate fully depleted silicon-on-insulator (FDSOI) technology. By enhancing the performance of the NMOS and devices within the level shifting circuit, the Vt of the dual gate FDSOI NMOS transistors is lowered without a need for additional control circuitry. Lowering the Vt can be accomplished through dynamic secondary gate control, by coupling together primary and secondary gates of the NMOS devices, while secondary gates of the PMOS devices can be coupled to a high voltage supply level. Such high performance NMOS devices can then operate at higher frequencies and run on a much wider range of core power supplies. Meanwhile, conventional DC conditions are maintained during steady state operation. Because no components are added to the level shifter circuit, the higher performance is achieved without an increase in size and current consumption.

Abstract: Circuit module designs that incorporate dual gate field effect transistors are implemented with fully depleted silicon-on-insulator (FD-SOI) technology. Lowering the threshold voltages of the transistors can be accomplished through dynamic secondary gate control in which a back-biasing technique is used to operate the dual gate FD-SOI transistors with enhanced switching performance. Consequently, such transistors can operate at very low core voltage supply levels, down to as low as about 0.4 V, which allows the transistors to respond quickly and to switch at higher speeds. Performance improvements are shown in circuit simulations of an inverter, an amplifier, a level shifter, and a voltage detection circuit module.