Abstract: Methods, systems, and devices for transient threshold voltage scan are described. For example, a memory system may set or maintain one or more memory blocks in a transient voltage threshold (VT) state by periodically applying a read voltage to sets of one or more memory blocks in the memory system. The memory system may apply the read voltage to a set of memory blocks simultaneously using a ganged reset read (GRR). In some examples, the memory system may reset a block range (e.g., across all memory blocks of the memory system) by periodically applying the read voltage to sets of memory blocks over time to maintain the memory blocks in the transient VT state and to reduce a bit error rate associated with a stable VT state to which the memory blocks may transition if they are not reset within a threshold duration.

Abstract: A variety of applications can include systems and/or methods of optimizing results from scanning a memory device, where the memory device has stacked multiple reliability specifications. Information about a block of multiple blocks of a memory device can be logged, where the information is associated with a combination of reliability specifications. A refresh of the block can be triggered based on exceeding a threshold condition for the combination of reliability specifications.

Abstract: A variety of applications can include systems and/or methods of optimizing results from scanning a memory device, where the memory device has stacked multiple reliability specifications. Information about a block of multiple blocks of a memory device can be logged, where the information is associated with a combination of reliability specifications. A refresh of the block can be triggered based on exceeding a threshold condition for the combination of reliability specifications. Additional apparatus, systems, and methods are disclosed.

Abstract: Devices and techniques temperature sensitive NAND programming are disclosed herein. A device controller can receive a command to write data to a component of the device. A temperature can be obtained in response to the command, and the temperature can be combined with a temperature compensation value to calculate a verification level. The command can then be executed in accordance with the verification level.