Abstract: A semiconductor device assembly that includes an inductive coating is disclosed. The semiconductor device assembly includes a semiconductor substrate having circuitry disposed at a first side. A layer of inductive material is disposed at a second side of the semiconductor substrate opposite the first side. A die attach film (DAF) is disposed at the second side of the semiconductor substrate at least partially over the layer of inductive material. The die attach film can be used to attach the semiconductor device assembly to an additional substrate. The layer of inductive material can be disposed at least partially between the semiconductor substrate and the die attach film, which can decrease the damage caused by electrostatic discharge (ESD) events.

Abstract: Implementations described herein relate to various semiconductor device assemblies and methods of forming the same. In some implementations, a semiconductor assembly may include a semiconductor wafer including a face including one or more circuit elements and a back grinding tape adhered to the face. The back grinding tape may include a polymer base layer and an adhesive layer adhering the back grinding tape to the face of the semiconductor wafer, and the back grinding tape may exhibit a damping ratio of less than approximately 0.8. The back grinding tape may include at least one of infrared-activated crosslinking groups or thermally activated crosslinking groups such that a degree of crosslinking associated with the back grinding tape may vary according to at least one of an amount of heat applied to the back grinding tape or an amount of infrared radiation applied to the back grinding tape.

Abstract: Methods of identifying damaged microelectronic devices are described. A method includes applying a detection material to an active surface of a wafer. The detection material includes an additive configured to yield a visible reaction to heat or infrared or near-infrared light. The method may further include focusing a laser beam into an interior portion of the wafer through a second surface of the wafer opposite the active surface to form a modified layer along a separation region extending between adjacent microelectronic devices. The method may also include inspecting the detection material for visible reactions. The method may further include identifying reactions that indicate exposure to heat or infrared or near-infrared light over a pre-determined threshold. Protective tape, backgrind tapes, and methods of manufacturing a microelectronic device are also described.