Abstract: The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.

Abstract: A corrosion resistant coating for semiconductor process equipment and methods of making corrosion resistant coatings for semiconductor process equipment are provided herein. In some embodiments, a method of treating a semiconductor processing chamber component, includes: anodizing a semiconductor processing chamber component comprising an aluminum containing body in an anodizing solution comprising a neutral electrolyte and a resistive material to form a corrosion resistant coating atop the aluminum containing body. In some embodiments, a method of treating a semiconductor processing chamber component, includes: anodizing a semiconductor processing chamber component comprising an aluminum containing body in a neutral electrolyte solution to form an aluminum oxide layer on a surface of the aluminum containing body; and dipping the anodized semiconductor processing chamber component in a resistive material solution to form a resistive material layer atop the aluminum oxide layer.

Abstract: In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.

Abstract: A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10° C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NH4OH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlxOy film having a thickness of 4 to 8 nm and a surface roughness less than 0.05 ?m greater than a surface roughness of the component without the AlxOy film.

Abstract: The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

Abstract: The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.

Abstract: The disclosure relates to a chamber component or a method for fabricating a chamber component for use in a plasma processing chamber apparatus. In one embodiment, a chamber component, for use in a plasma processing apparatus, includes an aluminum body having an anodized coating disposed on the aluminum body formed from a neutral electrolyte solution, wherein the anodized coating has a film density higher than 3.1 g/cm?2.

Abstract: A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10° C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NH4OH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlxOy film having a thickness of 4 to 8 nm and a surface roughness less than 0.05 ?m greater than a surface roughness of the component without the AlxOy film.

Abstract: The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.

Abstract: A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.

Abstract: Embodiments of the invention generally provide apparatuses and methods of substrate temperature control during thin film solar manufacturing. In one embodiment a method for forming a thin film solar cell over a substrate is provided. The method comprises performing a temperature stabilization process on a substrate to pre-heat the substrate for a substrate stabilization time period in a first chamber, calculating a wait time period for a second chamber, wherein the wait time period is bases on the availability of the second chamber, the availability of a vacuum transfer robot adapted to transfer the substrate from the first chamber to the second chamber, or a combination of both the availability of the second chamber and the availability of the vacuum transfer robot, and adjusting the temperature stabilization time period to compensate for the loss of heat from the substrate during the wait time period.

Abstract: Methods for sputter depositing a transparent conductive oxide (TCO) layer are provided in the present invention. The transparent conductive oxide layer may be utilized as a back reflector in a photovoltaic device. In one embodiment, the method includes providing a substrate in a processing chamber, forming a first portion of a transparent conductive oxide layer on the substrate by a first sputter deposition step, and forming a second portion of the transparent conductive oxide layer by a second sputter deposition step.

Abstract: The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.

Abstract: A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.