Abstract: A method for performing readout of a pixel array associated with an image sensor may include for a first exposure row and one or more additional exposure rows of the pixel array, detecting, using processing circuitry, completion of exposure operations of the first exposure row and the one or more additional exposure rows, and reading, using the processing circuitry, pixel values from sets of columns associated with sets of analog to digital converters (ADCs) corresponding to the first exposure row and the one or more additional exposure rows.

Abstract: A Complementary Metal Oxide Semiconductor (CMOS) Image Sensor (CIS), includes a pixel circuit, a VSL circuit, and an amplifier. The pixel circuit may generate a reset voltage and a signal voltage, based on a power supply connected to the pixel circuit and/or intensity of light captured by the pixel circuit. The VSL circuit may store pixel information in a pixel load based on settling a voltage at the pixel load to the signal voltage and/or set the voltage at the pixel load to a pixel reset voltage based on settling the voltage at the pixel load to the reset voltage. The amplifier may generate a voltage, based on varying a resistance at an input of the amplifier, to enable the VSL circuit to store the pixel information and/or set the voltage at the pixel load to the pixel reset voltage.

Abstract: An apparatus for generating multi-signaling output voltage may include at least one output buffer, wherein the at least one the output buffer may include a first PMOS transistor, a second PMOS transistor, a first NMOS transistor, a second NMOS transistor, and a Zener diode along with a switchable current source. The apparatus may further include first logic circuitry, second logic circuitry, first voltage down level shifter circuitry, second voltage down level shifter circuitry, and a first voltage up level shifter circuitry. Outputs of the first voltage down level shifter circuitry, the second voltage down level shifter circuitry, and the first voltage up level shifter circuitry are combined using the output buffer to generate the desired output. The second NMOS transistor acts as isolation transistor for reducing and/or preventing diode current between a first supply voltage and the third supply voltage.

Abstract: A method for reducing thermal shading in a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. The method includes: detecting one or more regions in a CMOS image sensor in which thermal shading occurs, the CMOS image sensor including a plurality of heating elements in a chip; automatically switching a subset of the plurality of heating elements to turn on based on the detected one or more regions; and automatically switching the subset of the plurality of heating elements to turn off in an active power consumption phase of the CMOS image sensor.