Patents by Inventor Anlian Pan

Anlian Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Laterally varying II-VI alloys and uses thereof
    Patent number: 9589793
    Abstract: Described herein are semiconductor structures comprising laterally varying II-VI alloy layer formed over a surface of a substrate. Further, methods are provided for preparing laterally varying II-VI alloy layers over at least a portion of a surface of a substrate comprising contacting at least a portion of a surface of a substrate within a reaction zone with a chemical vapor under suitable reaction conditions to form a laterally varying II-VI alloy layer over the portion of the surface of the substrate, wherein the chemical vapor is generated by heating at least two II-VI binary compounds; and the reaction zone has a temperature gradient of at least 50-100° C. along an extent of the reaction zone. Also described here are devices such as lasers, light emitting diodes, detectors, or solar cells that can use such semiconductor structures.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: March 7, 2017
    Assignee: Arizona Board of Regents, A Body Corporate Acting For And On Behalf of Arizona State University
    Inventors: Cun-Zheng Ning, Anlian Pan
  • Laterally Varying II-VI Alloys and Uses Thereof
    Publication number: 20110272744
    Abstract: Described herein are semiconductor structures comprising laterally varying II-VI alloy layer formed over a surface of a substrate. Further, methods are provided for preparing laterally varying II-VI alloy layers over at least a portion of a surface of a substrate comprising contacting at least a portion of a surface of a substrate within a reaction zone with a chemical vapor under suitable reaction conditions to form a laterally varying II-VI alloy layer over the portion of the surface of the substrate, wherein the chemical vapor is generated by heating at least two II-VI binary compounds; and the reaction zone has a temperature gradient of at least 50-100° C. along an extent of the reaction zone. Also described here are devices such as lasers, light emitting diodes, detectors, or solar cells that can use such semiconductor structures.
    Type: Application
    Filed: November 6, 2009
    Publication date: November 10, 2011
    Applicant: ARIZONA BOARD OF REGENTS, a body corporate acting for and on behalf of ARIZONA STATE UNIVERSITY
    Inventors: Cun-zheng Ning, Anlian Pan