Abstract: Embodiments of the present invention provide methods for patterning a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a metal layer on a substrate includes (a) supplying an etching gas mixture comprising a hydro-carbon gas into a processing chamber having a substrate disposed therein, the substrate having a metal layer disposed thereon, (b) exposing the metal layer to an ashing gas mixture comprising a hydrogen containing gas to the substrate, and (c) repeatedly performing steps (a) and (b) until desired features are formed in the metal layer. During the patterning process, the substrate temperature may be controlled at greater than 50 degrees Celsius.

Abstract: Embodiments of the present invention provide methods for patterning a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a metal layer on a substrate includes (a) supplying an etching gas mixture comprising a hydro-carbon gas into a processing chamber having a substrate disposed therein, the substrate having a metal layer disposed thereon, (b) exposing the metal layer to an ashing gas mixture comprising a hydrogen containing gas to the substrate, and (c) repeatedly performing steps (a) and (b) until desired features are formed in the metal layer. During the patterning process, the substrate temperature may be controlled at greater than 50 degrees Celsius.

Abstract: A method of in-situ groundwater nitrification, by: extracting groundwater from the ground; adding oxygen to the extracted groundwater; adding nutrients to the extracted groundwater; and injecting the groundwater back into the ground, wherein the oxygen reacts with in-situ nitrifying bacteria to oxidize ammonia to nitrate, and wherein the nutrients encourage the nitrifying bacteria to grow and reproduce. A method of in-situ groundwater de-nitrification, by: extracting the groundwater from the ground; adding carbon to the extracted groundwater; adding nutrients to the extracted groundwater; and injecting the groundwater back into the ground, wherein the carbon reacts with in-situ de-nitrifying bacteria to reduce nitrate to nitrogen gas, and wherein the nutrients encourage the de-nitrifying bacteria to grow and reproduce.

Abstract: A method of in-situ groundwater nitrification, by: extracting groundwater from the ground; adding oxygen to the extracted groundwater; adding nutrients to the extracted groundwater; and injecting the groundwater back into the ground, wherein the oxygen reacts with in-situ nitrifying bacteria to oxidize ammonia to nitrate, and wherein the nutrients encourage the nitrifying bacteria to grow and reproduce. A method of in-situ groundwater de-nitrification, by: extracting the groundwater from the ground; adding carbon to the extracted groundwater; adding nutrients to the extracted groundwater; and injecting the groundwater back into the ground, wherein the carbon reacts with in-situ de-nitrifying bacteria to reduce nitrate to nitrogen gas, and wherein the nutrients encourage the de-nitrifying bacteria to grow and reproduce.

Abstract: This invention relates to a method of oxide hardmask aluminum etching in metal dry etch processors. It consists of two steps: the step of dry etching an aluminum interconnect stack by using an etch gas composed mainly of boron trichloride/chlorine/fluoroform/nitrogen, and the step of removing etch remnants by using a vapor plasma. The function of the etch gas is to etch the aluminum interconnection pattern in the semi-conductor, and the function of the water vapor plasma is to prevent the corrosion of a chip during the process of removing etch remnants, which will further reduce water rinsing and solution cleaning as in conventional practice, of water rinsing and solution cleaning after removal of photoresist.

Abstract: This invention relates to a method of oxide hardmasking in metal dry etch processors. It consists of two steps: the step of dry etching an aluminum copper alloy layer by using an etch gas composed mainly of boron trichloride/chlorine/fluoroform/nitrogen, and the step of removing etch remnants by using a vapor plasma. The function of the etch gas is to etch the aluminum copper alloy interconnection pattern in the semi-conductor, and the function of the vapor plasma is to prevent the corrosion of a chip during the process of removing etch remnants, which will further reduce water rinsing and solution cleaning as in conventional practice, of water rinsing and solution cleaning after removal of photoresist.