Abstract: An apparatus and method for testing gallium nitride field effect transistors (GaN FETs) are disclosed herein. In some embodiments, the apparatus includes: a high side GaN FET, a low side GaN FET, a high side driver coupled to a gate of the high side GaN FET, a low side driver coupled to a gate of the low side GaN FET, and a driver circuit coupled to the high side and low side drivers and configured to generate drive signals capable of driving the high and low side GaN FETs, wherein the high and low side GaN FETs and transistors, within the high and low side drivers and the driver circuit, are patterned on a same semiconductor device layer during a front-end-of-line (FEOL) process.

Abstract: An apparatus and method for testing gallium nitride field effect transistors (GaN FETs) are disclosed herein. In some embodiments, the apparatus includes: a high side GaN FET, a low side GaN FET, a high side driver coupled to a gate of the high side GaN FET, a low side driver coupled to a gate of the low side GaN FET, and a driver circuit coupled to the high side and low side drivers and configured to generate drive signals capable of driving the high and low side GaN FETs, wherein the high and low side GaN FETs and transistors, within the high and low side drivers and the driver circuit, are patterned on a same semiconductor device layer during a front-end-of-line (FEOL) process.

Abstract: An apparatus and method for testing gallium nitride field effect transistors (GaN FETs) are disclosed herein. In some embodiments, the apparatus includes: a high side GaN FET, a low side GaN FET, a high side driver coupled to a gate of the high side GaN FET, a low side driver coupled to a gate of the low side GaN FET, and a driver circuit coupled to the high side and low side drivers and configured to generate drive signals capable of driving the high and low side GaN FETs, wherein the high and low side GaN FETs and transistors, within the high and low side drivers and the driver circuit, are patterned on a same semiconductor device layer during a front-end-of-line (FEOL) process.

Abstract: A thick film electrochemical micro-sensor device for detecting or monitoring sulfur dioxide, comprising a substrate to which is applied a working electrode, a counter electrode, a reference electrode, and optionally a heater and a temperature detector, wherein a portion of the electrodes is covered with an insulator, and a portion of the electrodes is covered with an electrolyte. The device is especially useful for detecting or monitoring sulfur dioxide in emission gases. A method of detecting or monitoring sulfur dioxide emissions using the electrochemical micro-sensor device includes contacting the emission gas with the sensor of the present invention, measuring the current output of the sensor, determining if the current output indicates the presence of sulfur dioxide, and generating a signal, that can be used to actuate a scrubber system when a pre-determined level of sulfur dioxide is detected.

Abstract: A thick film electrochemical micro-sensor device for detecting or monitoring sulfur dioxide, comprising a substrate to which is applied a working electrode, a counter electrode, a reference electrode, and optionally a heater and a temperature detector, wherein a portion of the electrodes is covered with an insulator, and a portion of the electrodes is covered with an electrolyte. The device is especially useful for detecting or monitoring sulfur dioxide in emission gases. A method of detecting or monitoring sulfur dioxide emissions using the electrochemical micro-sensor device includes contacting the emission gas with the sensor of the present invention, measuring the current output of the sensor, determining if the current output indicates the presence of sulfur dioxide, and generating a signal, that can be used to actuate a scrubber system when a pre-determined level of sulfur dioxide is detected.