Patents by Inventor Ann Liao

Ann Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming buried bit line DRAM circuitry
    Publication number: 20070087498
    Abstract: A method of forming buried bit line DRAM circuitry includes collectively forming a buried bit line forming trench, bit line vias extending from the bit line forming trench, and memory array storage node vias within a dielectric mass using only two masking steps. Conductive material is simultaneously deposited to within the buried bit line forming trench, the bit line vias, and the memory storage node vias within the dielectric mass. Other aspects and implementations are contemplated.
    Type: Application
    Filed: December 12, 2006
    Publication date: April 19, 2007
    Inventors: Ann Liao, Michael Westphal
  • Methods of forming buried bit line DRAM circuitry
    Publication number: 20060008979
    Abstract: A method of forming buried bit line DRAM circuitry includes collectively forming a buried bit line forming trench, bit line vias extending from the bit line forming trench, and memory array storage node vias within a dielectric mass using only two masking steps. Conductive material is simultaneously deposited to within the buried bit line forming trench, the bit line vias, and the memory storage node vias within the dielectric mass. Other aspects and implementations are contemplated.
    Type: Application
    Filed: September 1, 2005
    Publication date: January 12, 2006
    Inventors: Ann Liao, Michael Westphal