Patents by Inventor Ann Marie Hurst

Ann Marie Hurst has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for chemical mechanical planarization of a tungsten-containing substrate
    Patent number: 8858819
    Abstract: The titled method affords low dishing levels in the polished substrate while simultaneously affording high metal removal rates. The method utilizes an associated polishing composition. Components in the composition include a poly(alkyleneimine) such as polyethyleneimine, an abrasive, an acid, and an oxidizing agent, such as a per-compound.
    Type: Grant
    Filed: January 26, 2011
    Date of Patent: October 14, 2014
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Rachel Dianne McConnell, Ann Marie Hurst, Xiaobo Shi
  • Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate
    Patent number: 8790521
    Abstract: A combination, composition and associated method for chemical mechanical planarization of a tungsten-containing substrate are described herein which afford tunability of tungsten/dielectric selectivity and low selectivity for tungsten removal in relation to dielectric material. Removal rates for both tungsten and dielectric are high and stability of the slurry (e.g., with respect to pH drift over time) is high.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: July 29, 2014
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Rachel Dianne McConnell, Ann Marie Hurst
  • Combination, Method, and Composition for Chemical Mechanical Planarization of a Tungsten-Containing Substrate
    Publication number: 20130288479
    Abstract: A combination, composition and associated method for chemical mechanical planarization of a tungsten-containing substrate are described herein which afford tunability of tungsten/dielectric selectivity and low selectivity for tungsten removal in relation to dielectric material. Removal rates for both tungsten and dielectric are high and stability of the slurry (e.g., with respect to pH drift over time) is high.
    Type: Application
    Filed: June 28, 2013
    Publication date: October 31, 2013
    Inventors: Rachel Dianne McCONNELL, Ann Marie HURST
  • Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate
    Patent number: 8506831
    Abstract: A combination, composition and associated method for chemical mechanical planarization of a tungsten-containing substrate are described herein which afford tunability of tungsten/dielectric selectivity and low selectivity for tungsten removal in relation to dielectric material. Removal rates for both tungsten and dielectric are high and stability of the slurry (e.g., with respect to pH drift over time) is high.
    Type: Grant
    Filed: December 3, 2009
    Date of Patent: August 13, 2013
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Dianne Rachel McConnell, Ann Marie Hurst
  • Method for Chemical Mechanical Planarization of a Tungsten-Containing Substrate
    Publication number: 20120028466
    Abstract: The titled method affords low dishing levels in the polished substrate while simultaneously affording high metal removal rates. The method utilizes an associated polishing composition. Components in the composition include a poly(alkyleneimine) such as polyethyleneimine, an abrasive, an acid, and an oxidizing agent, such as a per-compound.
    Type: Application
    Filed: January 26, 2011
    Publication date: February 2, 2012
    Applicant: DUPONT AIR PRODUCTS NANOMATERIALS, LLC
    Inventors: Rachel Dianne McConnell, Ann Marie Hurst, Xiaobo Shi