Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

Abstract: Process for manufacturing a 3C-SiC layer, comprising the steps of: providing a wafer of 4H-SiC, provided with a surface; heating, through a LASER beam, a selective portion of the wafer at least up to a melting temperature of the material of the selective portion; allowing the cooling and crystallization of the melted selective portion, thus forming the 3C-SiC layer, a Silicon layer on the 3C-SiC layer and a carbon-rich layer above the Silicon layer; completely removing the carbon-rich layer and the Silicon layer, exposing the 3C-SiC layer. If the Silicon layer is maintained on the 4H-SiC wafer, the process leads to the formation of a Silicon layer on the 4H-SiC wafer. The 3C-SiC or Silicon layer thus formed may be used for the integration, even only partial, of electrical or electronic components.

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

Abstract: A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the body; a second layer of a second metal, different from the first metal, is formed on the first layer to form a multilayer, the first or the second metal being nickel or a nickel alloy and forming a nickel-based layer, another of the first or the second metal being a metal X, capable to form stable compounds with carbon and forming an X-based layer; and the multilayer is annealed to form a mixed layer including nickel silicide and at least one of X carbide or a metal X-carbon ternary compound.

Abstract: For the manufacturing of a vertical conduction silicon carbide electronic device, a work wafer, which has a silicon carbide substrate having a work face, is processed. A rough face is formed from the work face of the silicon carbide substrate. The rough face has a roughness higher than a threshold. A metal layer is deposited on the rough face and the metal layer is annealed, thereby causing the metal layer to react with the silicon carbide substrate, forming a silicide layer having a plurality of protrusions of silicide.

Abstract: A metal layer is deposited on a wafer that has silicon carbide, wherein the metal layer forms a contact face. A laser annealing is performed at the contact face using a laser beam application that causes the metal layer to react with the wafer and form a silicide layer. The laser beam has a footprint having a size. To laser anneal the contact face, a first portion of the contact face is irradiated, the footprint of the laser beam is moved by a step smaller than the size of the footprint, and a second portion of the contact face is irradiated, thereby causing the first portion and the second portion of the contact face to overlap.

Abstract: A process for manufacturing a silicon carbide semiconductor device includes providing a silicon carbide wafer, having a substrate. An epitaxial growth for formation of an epitaxial layer, having a top surface, is carried out on the substrate. Following upon the step of carrying out an epitaxial growth, the process includes the step of removing a surface portion of the epitaxial layer starting from the top surface so as to remove surface damages present at the top surface as a result of propagation of dislocations from the substrate during the previous epitaxial growth and so as to define a resulting top surface substantially free of defects.

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

Abstract: The present invention relates to oxygen-substituted sterically hindered amines of the formulae I or II: (II), wherein, for example, F2, R3, R5, R6, R8, R9, R11, R12, R13, R14 are n-butyl: Z1 to Z10 are propoxy and R1, R4, R7, R10, R13 are 2,2,6,6-tetramethyl-1-propoxy-piperidin-4-yl. Compositions comprising compounds of formulae I or II and an organic material, which is susceptible to oxidative, thermal or light-induced degradation, are further disclosed. Optionally, further additives are contained.

Abstract: The present invention relates to oxygen-substituted sterically hindered amines of the formulae I or II: (II), wherein, for example, F2, R3, R5, R6, R8, R9, R11, R12, R13, R14 are n-butyl: Z1 to Z10 are propoxy and R1, R4, R7, R10, R13 are 2,2,6,6-tetramethyl-1-propoxy-piperidin-4-yl. Compositions comprising compounds of formulae I or II and an organic material, which is susceptible to oxidative, thermal or light-induced degradation, are further disclosed. Optionally, further additives are contained.

Abstract: The present invention relates to oxygen-substituted sterically hindered amines of the formulae I or II: (II), wherein, for example, F2, R3, R5, R6, R8, R9, R11, R12, R13, R14 are n-butyl: Z1 to Z10 are propoxy and R1, R4, R7, R10, R13 are 2,2,6,6-tetramethyl-1-propoxy-piperidin-4-yl. Compositions comprising compounds of formulae I or II and an organic material, which is susceptible to oxidative, thermal or light-induced degradation, are further disclosed. Optionally, further additives are contained.

Abstract: The present invention relates to oxygen-substituted sterically hindered amines of the formulae I or II: (II), wherein, for example, F2, R3, R5, R6, R8, R9, R11, R12, R13, R14 are n-butyl; Z1 to Z10 are propoxy and R1, R4, R7, R10, R13 are 2,2,6,6-tetramethyl-1-propoxy-piperidin-4-yl. Compositions comprising compounds of formulae I or II and an organic material, which is susceptible to oxidative, thermal or light-induced degradation, are further disclosed. Optionally, further additives are contained.

Abstract: The present invention relates to oxygen-substituted sterically hindered amines of the formulae I or II: (II), wherein, for example, F2, R3, R5, R6, R8, R9, R11, R12, R13, R14 are n-butyl: Z1 to Z10 are propoxy and R1, R4, R7, R10, R13 are 2,2,6,6-tetramethyl-1-propoxy-piperidin-4-yl. Compositions comprising compounds of formulae I or II and an organic material, which is susceptible to oxidative, thermal or light-induced degradation, are further disclosed. Optionally, further additives are contained.

Abstract: N-substituted Macrocyclic Triazine-HALS Stabilizers.

Abstract: The present invention relates to oxygen-substituted sterically hindered amines of the formulae I or II: (II), wherein, for example, F2, R3, R5, R6, R8, R9, R11, R12, R13, R14 are n-butyl; Z1 to Z10 are propoxy and R1, R4, R7, R10, R13 are 2,2,6,6-tetramethyl-1-propoxy-piperidin-4-yl. Compositions comprising compounds of formulae I or II and an organic material, which is susceptible to oxidative, thermal or light-induced degradation, are further disclosed. Optionally, further additives are contained.

Abstract: The invention relates to stabilized thermoplastic polymers, in particular polyolefin films. The stabilizing composition contains a tertiary amine with a molecular weight greater than 400 g/mol, a UV-absorber and/or a sterically hindered amine light stabilizer (HALS). Further aspects of the invention are a process for stabilizing thermoplastic polymers and the use of the above composition for stabilizing thermoplastic polymers.

Abstract: N-substituted Macrocyclic Triazine-HALS Stabilizers.