Abstract: The subject of the invention is the method for manufacturing a laser and light guide system comprising the following steps: a gallium nitride substrate is formed, after which regions with increased disorientation in relation to their surroundings are defined on the gallium nitride substrate, a bottom cladding layer is deposited, a bottom light guide layer is deposited, a light-emitting layer is deposited, a non-doped upper light guide layer is deposited, an electron blocking layer is deposited, an upper light guide layer is deposited, an upper cladding layer is deposited, an subcontact layer is deposited, a spatial structure of a light guide in a shape of a ridge is formed, an aperture separating the laser and the light guide is formed, forming one of the laser mirrors, wherein the light guide is formed out of the same layers as the laser structure, whereas the quantum wells in the light guide region comprise at least 3.

Abstract: The invention relates to a method for manufacturing a two-dimensional laser diode array comprising preparing a structured gallium nitride bulk substrate, a lower cladding layer, a lower light guide layer, a light-emitting layer, electron blocking layers, an upper light guide layer, an upper cladding layer, a subcontact layer, and includes forming, in GaN substrate (1) with thickness of at least 200 ?m, light beam deflectors (15) by applying photoresist on the GaN substrate (1), irradiating it, developing it, and subsequently etching the applied layer in order to obtain the light beam deflectors (15). The invention relates also to a two-dimensional laser diode array manufactured using the method according to the invention.

Abstract: The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminum content.

Abstract: The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminium content.