Patents by Inventor Anna-Lisa Serra

Anna-Lisa Serra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for programming a phase change memory
    Patent number: 11800820
    Abstract: A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to J 0 ? ( t ) = K t where K is a constant.
    Type: Grant
    Filed: November 22, 2021
    Date of Patent: October 24, 2023
    Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Gabriele Navarro, Anna-Lisa Serra, Guillaume Bourgeois, Chiara Sabbione
  • PHASE CHANGE MEMORY DEVICE
    Publication number: 20220165945
    Abstract: A phase change memory device comprising, between first and second electrodes: a first layer of a phase change material; and a second germanium nitride-based layer, in contact with the first layer, the nitrogen percentage in the second layer being between 20% and 35%, and the second layer having a channel of the phase change material of the first layer passing through it.
    Type: Application
    Filed: November 22, 2021
    Publication date: May 26, 2022
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Gabriele Navarro, Chiara Sabbione, Guillaume Bourgeois, Anna-Lisa Serra
  • METHOD FOR PROGRAMMING A PHASE CHANGE MEMORY
    Publication number: 20220165946
    Abstract: A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to J 0 ? ( t ) = K t where K is a constant.
    Type: Application
    Filed: November 22, 2021
    Publication date: May 26, 2022
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Gabriele Navarro, Anna-Lisa Serra, Guillaume Bourgeois, Chiara Sabbione