Patents by Inventor Anna Maltenberger

Anna Maltenberger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170327516
    Abstract: A metal complex is disclosed. In an embodiment the metal complex includes at least one metal atom M and at least one ligand L attached to the metal atom M, wherein the ligand L has the following structure: wherein E1 and E2 are oxygen, wherein the substituent R1 is selected from the group consisting of branched or unbranched, fluorinated aliphatic hydrocarbons with 1 to 10 C atoms, wherein n=1 to 5, wherein the substituent R2 is selected from the group consisting of —CN, branched or unbranched aliphatic hydrocarbons with 1 to 10 C atoms, aryl and heteroaryl, and wherein m=0 to at most 5?n.
    Type: Application
    Filed: July 31, 2017
    Publication date: November 16, 2017
    Inventors: Guenter Schmid, Anna Maltenberger, Sebastien Pecqueur, Stefan Regensburger
  • Publication number: 20170317288
    Abstract: A method for producing an organic electronic component and an organic electronic component are disclosed. In an embodiment the component comprises at least one organic electronic layer having a matrix, wherein the matrix contains a metal complex as a dopant, wherein the metal complex comprises at least one metal atom M and at least one ligand L bonded to the metal atom M.
    Type: Application
    Filed: December 22, 2014
    Publication date: November 2, 2017
    Inventors: Guenter Schmid, Anna Maltenberger, Sebastien Pecqueur, Stefan Regensburger
  • Publication number: 20170301872
    Abstract: An organic electronic component and a method for making an organic electronic component with a p-dopant are disclosed. In an embodiment, the component includes a matrix containing a zinc complex as a p-dopant, the zinc complex containing at least one ligand L of the following structure: formula (I) wherein R1 and R2 can be oxygen, sulphur, selenium, NH or NR4 independently selected from one another, wherein R3 may comprise alkyl, long-chain alkyl, cycloalkyl, halogen-alkyl, aryl, arylene, halogen-aryl, heteroaryl, heteroarylene, heterocyclic-alkylene, heterocycloalkyl, halogen-heteroaryl, alkenyl, halogen-alkenyl, alkynyl, halogen-alkynyl, ketoaryl, halogen-ketoaryl, ketoheteroaryl, ketoalkyl, halogen-ketoalkyl, ketoalkenyl, halogen-ketoalkenyl, halogen-alkyl-aryl or halogen-alkyl-heteroaryl, and wherein R4 is selected from the group consisting of alkyl and aryl which can be bonded to R3.
    Type: Application
    Filed: September 28, 2015
    Publication date: October 19, 2017
    Inventors: Guenter Schmid, Anna Maltenberger, Sebastien Pecqueur, Florian Kessler, Stefan Regensburger
  • Publication number: 20170098787
    Abstract: A metal complex of a metal from groups 13 to 16 uses a ligand of the structure (I), where R.sup.1 and R.sup.2 can independently be oxygen, sulfur, selenium, NH or NR.sup.4, where R.sup.4 an alkyl or aryl and can be connected to R.sup.3. R.sup.3 is an alkyl, long-chain alkyl, alkoxy, long-chain alkoxy, cycloalkyl, halogenalkyl, aryl, arylene, halogenaryl, heteroaryl, heteroarylene, heterocycloalkylene, heterocycloalkyl, halogenheteroaryl, alkenyl, halogenalkenyl, alkynyl, halogenalkynyl, ketoaryl, halogenketoaryl, ketoheteroaryl, ketoalkyl, halogenketoalkyl, ketoalkenyl, halogenketoalkenyl, where in suitable radicals, one or more non-adjacent CH.sup.2-groups can be substituted independently of one another by —O—, —S—, —NH—, —NR.sup.o-, —SiR.sup.oR.sup.oo-, —CO—, —COO—, —OCO—, —OCO—O—, —SO.sub.2-, —S—CO—, —CO—S—, —CY1?CY2 or —C.dbd.
    Type: Application
    Filed: December 19, 2016
    Publication date: April 6, 2017
    Applicants: Siemens Aktiengesellschaft, OSRAM OLED GMBH
    Inventors: Anna Maltenberger, Marina A. Petrukhina, Guenter Schmid, Jan Hauke Wemken
  • Publication number: 20160181540
    Abstract: A method is provided for producing organic electrical layers having organic emitters that are phosphorescent at room temperature. Organic fluorescent emitters, together with organic complex ligands containing metal complexes, and at least one heavy main group metal, selected from the group comprising In, Tl, Sn, Pb, Sb and Bi, are deposited jointly inside a layer, and the heavy main group metal changes its coordination sphere by receiving the organic fluorescent emitter.
    Type: Application
    Filed: May 8, 2014
    Publication date: June 23, 2016
    Applicant: Siemens Aktiengesellschaft
    Inventors: Florian Kessler, Ana-Maria Krestel, Anna Maltenberger, Guenter Schmid, Dan Taroata
  • Patent number: 9276223
    Abstract: The invention relates to novel metal-organic materials for hole injection layers in organic electronic components. For example, in light-emitting components such as organic light diodes (OLED) or organic light-emitting electrochemical cells (OLEEC) or organic field effect transistors or organic solar cells or organic photo detectors. Luminescence (cd/m2), efficiency (cd/A), and service life (h) of organic electronic components such as from organic light diodes in particular are highly dependent on the exciton thickness in the light-emitting layer and on the quality of the charge carrier injection and are also limited by same, among other things. The invention relates to a hole injection layer consisting of quadratic planar mononuclear transition metal complexes such as copper 2+ complexes, for example, which are embedded into a hole-conducting matrix.
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: March 1, 2016
    Assignee: OSRAM OLED GmbH
    Inventors: David Hartmann, Sabine Szyszkowski, Andreas Kanitz, Anna Maltenberger, Wiebke Sarfert-Gast, Guenter Schmid, Jan Hauke Wemken
  • Patent number: 9263696
    Abstract: An organic semiconductor component with a hole conductor layer having p-type doping with a superacid salt has greatly improved charged transport and optical properties. Besides increasing the specific conductivity at very low doping concentrations, the doping brings about substantially no negative change in the color impression of the layer for the human eye. The absorbtivity of the hole conductor layer is not increased in the visible wavelength range as a result of the p-type doping with the superacid salt. Deposition from solution and from the gas phase is possible.
    Type: Grant
    Filed: January 5, 2012
    Date of Patent: February 16, 2016
    Assignee: SIEMENS AKTIENGESELLSCHAFT
    Inventors: Renate Kellermann, Anna Maltenberger, Günter Schmid, Jan Hauke Wemken
  • Publication number: 20150200374
    Abstract: The invention relates to novel metal-organic materials for hole injection layers in organic electronic components. For example, in light-emitting components such as organic light diodes (OLED) or organic light-emitting electrochemical cells (OLEEC) or organic field effect transistors or organic solar cells or organic photo detectors. Luminescence (cd/m2), efficiency (cd/A), and service life (h) of organic electronic components such as from organic light diodes in particular are highly dependent on the exciton thickness in the light-emitting layer and on the quality of the charge carrier injection and are also limited by same, among other things. The invention relates to a hole injection layer consisting of quadratic planar mononuclear transition metal complexes such as copper 2+ complexes, for example, which are embedded into a hole-conducting matrix.
    Type: Application
    Filed: February 27, 2015
    Publication date: July 16, 2015
    Inventors: David Hartmann, Sabine Herder Szyszkowski, Andreas Kanitz, Anna Maltenberger, Wiebke Sarfert, Guenter Schmid, Jan Hauke Wemken
  • Publication number: 20150162534
    Abstract: A bi- or polynuclear metal complex of a metal of groups Vb/VIb/VIIb (IUPAC groups 5-7), has a ligand of the structure (a), wherein R1 and R2, independently of each other, can be oxygen, sulfur, selenium, NH, or NR4, wherein R4 is selected from alkyls and aryls and can be bonded to R3; and R3 is selected from alkyls, long-chain alkyls, alkoxys, long-chain alkoxys, cycloalkyls, haloalkyls, aryls, arylenes, haloaryls, heteroaryls, heteroarylenes, heterocycloalkylenes, heterocycloalkyls, haloheteroaryls, alkenyls, haloalkenyls, alkynyls, haloalkynyls, ketoaryls, haloketoaryls, ketoheteroaryls, ketoalkyls, haloketoalkyls, ketoalkenyls, haloketoalkenyls, where one or more non-adjacent CH2 groups can be replaced, independently, with (1) —O—, —S—, —NH—, —NR°—, —SiR°R°°—, —CO—, —COO—, —OCO—, —OCO—O—, —SO2-, —S—CO—, —CO—S—, —CY1=CY2, or —C?O— in such a way that O and/or S atoms are not bonded directly to each other, or (2) aryls or heteroaryls containing 1 to 30 C atoms, as a p-type doping agent for matrix materials of
    Type: Application
    Filed: May 14, 2013
    Publication date: June 11, 2015
    Applicants: OSRAM OLED GMBH, SIEMENS AKTIENGESELLSCHAFT
    Inventors: Anna Maltenberger, Sébastien Pecqueur, Guenter Schmid, Jan Hauke Wemken
  • Publication number: 20150123047
    Abstract: A metal complex of a metal from groups 13 to 16 uses a ligand of the structure (I), where R1 and R2 can independently be oxygen, sulfur, selenium, NH or NR4, where R4 an alkyl or aryl and can be connected to R3.
    Type: Application
    Filed: May 14, 2013
    Publication date: May 7, 2015
    Applicants: OSRAM OLED GMBH, SIEMENS AKTIENGESELLSCHAFT
    Inventors: Anna Maltenberger, Marina A. Petrukhina, Guenter Schmid, Jan Hauke Wemken
  • Patent number: 9006716
    Abstract: The invention relates to novel metal-organic materials for hole injection layers in organic electronic components. For example, in light-emitting components such as organic light diodes (OLED) or organic light-emitting electrochemical cells (OLEEC) or organic field effect transistors or organic solar cells or organic photo detectors. Luminescence (cd/m2), efficiency (cd/A), and service life (h) of organic electronic components such as from organic light diodes in particular are highly dependent on the exciton thickness in the light-emitting layer and on the quality of the charge carrier injection and are also limited by same, among other things. The invention relates to a hole injection layer consisting of quadratic planar mononuclear transition metal complexes such as copper 2+ complexes, for example, which are embedded into a hole-conducting matrix.
    Type: Grant
    Filed: March 31, 2011
    Date of Patent: April 14, 2015
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: David Hartmann, Sabine Szyszkowski, Andreas Kanitz, Anna Maltenberger, Wiebke Sarfert, Guenter Schmid, Jan Hauke Wemken
  • Publication number: 20140210339
    Abstract: A phosphorescent metal complex is provided, which comprises a metallic central atom M and at least one ligand coordinated by the metallic central atom M, wherein the one metallic central atom M and the ligand form a six-membered metallacyclic ring. Additionally specified are a radiation-emitting component comprising a metal complex, and a process for preparing the metal complex.
    Type: Application
    Filed: March 14, 2014
    Publication date: July 31, 2014
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Jürgen ADLER, Andreas KANITZ, Günter SCHMID, Oksana FREYDENZON, Anna MALTENBERGER
  • Patent number: 8734962
    Abstract: A phosphorescent metal complex is provided, which comprises a metallic central atom M and at least one ligand coordinated by the metallic central atom M, wherein the one metallic central atom M and the ligand form a six-membered metallacyclic ring. Additionally specified are a radiation-emitting component comprising a metal complex, and a process for preparing the metal complex.
    Type: Grant
    Filed: May 20, 2008
    Date of Patent: May 27, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Jürgen Adler, Andreas Kanitz, Günter Schmid, Oksana Freydenzon, Anna Maltenberger
  • Publication number: 20140034934
    Abstract: An organic semiconductor component with a hole conductor layer having p-type doping with a superacid salt has greatly improved charged transport and optical properties. Besides increasing the specific conductivity at very low doping concentrations, the doping brings about substantially no negative change in the color impression of the layer for the human eye. The absorbtivity of the hole conductor layer is not increased in the visible wavelength range as a result of the p-type doping with the superacid salt. Deposition from solution and from the gas phase is possible.
    Type: Application
    Filed: January 5, 2012
    Publication date: February 6, 2014
    Applicant: SIEMENS AKTIENGESELLSCHAFT
    Inventors: Renate Kellermann, Anna Maltenberger, Günter Schmid, Jan Hauke Wemken
  • Patent number: 8610113
    Abstract: A material for a hole transport layer has a p-dopant. The dopant forms with the hole transport material a charge transfer complex. A metal component in solution is processed with the hole transport matrix material in solution to form the hole transport layer.
    Type: Grant
    Filed: May 5, 2010
    Date of Patent: December 17, 2013
    Assignee: Siemens Aktiengesellschaft
    Inventors: David Hartmann, Sabine Szyszkowski, Anna Maltenberger, Wiebke Sarfert, Günter Schmid, Riikka Suhonen
  • Publication number: 20130099209
    Abstract: The invention relates to novel metal-organic materials for hole injection layers in organic electronic components. For example, in light-emitting components such as organic light diodes (OLED) or organic light-emitting electrochemical cells (OLEEC) or organic field effect transistors or organic solar cells or organic photo detectors. Luminescence (cd/m2), efficiency (cd/A), and service life (h) of organic electronic components such as from organic light diodes in particular are highly dependent on the exciton thickness in the light-emitting layer and on the quality of the charge carrier injection and are also limited by same, among other things. The invention relates to a hole injection layer consisting of quadratic planar mononuclear transition metal complexes such as copper 2+ complexes, for example, which are embedded into a hole-conducting matrix.
    Type: Application
    Filed: March 31, 2011
    Publication date: April 25, 2013
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: David Hartmann, Sabine Szyszkowski, Andreas Kanitz, Anna Maltenberger, Wiebke Sarfert, Guenter Schmid, Jan Hauke Wemken
  • Publication number: 20120146006
    Abstract: A material for a hole transport layer has a p-dopant. The dopant forms with the hole transport material a charge transfer complex. A metal component in solution is processed with the hole transport matrix material in solution to form the hole transport layer.
    Type: Application
    Filed: May 5, 2010
    Publication date: June 14, 2012
    Inventors: David Hartmann, Sabine Herder, Anna Maltenberger, Wiebke Sarfert, Günter Schmid, Riikka Suhonen
  • Publication number: 20100213824
    Abstract: A phosphorescent metal complex is provided, which comprises a metallic central atom M and at least one ligand coordinated by the metallic central atom M, wherein the one metallic central atom M and the ligand form a six-membered metallacyclic ring. Additionally specified are a radiation-emitting component comprising a metal complex, and a process for preparing the metal complex.
    Type: Application
    Filed: May 20, 2008
    Publication date: August 26, 2010
    Applicant: OSRAM Opto Semiconductors Gmbh
    Inventors: Jürgen Adler, Andreas Kanitz, Günter Schmid, Oksana Freydenzon, Anna Maltenberger
  • Publication number: 20080191197
    Abstract: A memory cell reversibly switchable between different stable electrical resistance states, the memory cell having a first electrode and a second electrode and an active layer arranged between the first and the second electrode, the active layer including a compound represented by general formula , wherein R1 and R2 are independently selected from —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —S(CH2)mCH3, —S-aryl, —NR3R4, —SR3 and -halogen; R1 and R2 may together form a ring; R5 and R6 are independently selected from —H, -alkyl, -aryl and -heteroaryl; m is either 0 or an integer ranging from 1 to 10; n is an integer ranging from 2 to 1000; and a compound represented by general formula wherein R7, R8, R9, R10, R11, R12, R13, and R14 are independently selected from the group consisting of —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —CO(CH2)mCH3, -halogen, —CN and —NO2; R7 and R8 may together form a ring; R8 and R9 may together form a ring; R9 and R10 may together form a ring; R11 and R12 may to
    Type: Application
    Filed: July 21, 2005
    Publication date: August 14, 2008
    Applicant: QIMONDA AG
    Inventors: Andreas Walter, Recai Sezi, Reimund Engl, Anna Maltenberger, Joerg Schumann, Thomas Weitz
  • Publication number: 20080142774
    Abstract: An integrated circuit having resistive memory is disclosed. In one embodiment, the memory includes novel memory cells which have two electrodes and a layer arranged in between and including an active material which contains [1,2]dithiolo[4,3-[c]-1,2-dithiol-3,6-dithione, (2,4,7-trinitro-9-fluorenylidene)malonodinitrile and a polymer are disclosed. In one embodiment, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.
    Type: Application
    Filed: July 20, 2005
    Publication date: June 19, 2008
    Applicant: QIMONDA AG
    Inventors: Andreas Walter, Thomas Weitz, Reimund Engl, Recai Sezi, Anna Maltenberger, Joerg Schumann