Abstract: Displacement transducer device, adapted to be coupled to reference points of a structure, includes a first element integrally securable to a first reference point of the structure, first and second magnets arranged so as to magnetically repel one another, a transducer arranged proximate the first and second magnets so as to detect a variation in the magnetic field between the first and second magnet and to convert the variation into a signal processed by a processing unit, the displacement transducer device includes a second element integrally securable to a second reference point of the structure, and one of the first or second magnet or transducer being connected to the first element and the remaining elements of the first or second magnet or transducer being connected to the second element such that a relative movement of the first or the second reference point causes a variation in the magnetic field.

Abstract: Displacement transducer device, adapted to be coupled to reference points of a structure, includes a first element integrally securable to a first reference point of the structure, first and second magnets arranged so as to magnetically repel one another, a transducer arranged proximate the first and second magnets so as to detect a variation in the magnetic field between the first and second magnet and to convert the variation into a signal processed by a processing unit, the displacement transducer device includes a second element integrally securable to a second reference point of the structure, and one of the first or second magnet or transducer being connected to the first element and the remaining elements of the first or second magnet or transducer being connected to the second element such that a relative movement of the first or the second reference point causes a variation in the magnetic field.

Abstract: The present disclosure is directed to a MEMS resonant structure, provided with a substrate of semiconductor material; a mobile mass suspended above the substrate and anchored to the substrate by constraint elements to be free to oscillate at a resonance frequency; and a fixed-electrode structure capacitively coupled to the mobile mass to form a capacitor with a capacitance that varies as a function of the oscillation of the mobile mass; the fixed-electrode structure arranged on a top surface of the substrate, and the constraint elements being configured in such a way that the mobile mass oscillates, in use, in a vertical direction, transverse to the top surface of the substrate, keeping substantially parallel to the top surface.

Abstract: The present disclosure is directed to a MEMS resonant structure, provided with a substrate of semiconductor material; a mobile mass suspended above the substrate and anchored to the substrate by constraint elements to be free to oscillate at a resonance frequency; and a fixed-electrode structure capacitively coupled to the mobile mass to form a capacitor with a capacitance that varies as a function of the oscillation of the mobile mass; the fixed-electrode structure arranged on a top surface of the substrate, and the constraint elements being configured in such a way that the mobile mass oscillates, in use, in a vertical direction, transverse to the top surface of the substrate, keeping substantially parallel to the top surface.

Abstract: A surface acoustic wave pressure sensor includes: a substrate and at least one flexible membrane, suspended over a cavity defined in the thickness of the substrate, the membrane being elastically deformable by a pressure applied by a fluid and being defined between a first surface facing the cavity and a second opposite surface; a SAW device comprising a layer of piezoelectric material arranged on the second surface of the membrane, the SAW device further comprising at least one SAW electro-acoustic transducer formed on one free surface of the piezoelectric layer. The piezoelectric layer is formed by deposition of piezoelectric material on the membrane and the substrate is integrated in a chip of semiconductor material, the membrane being a layer of the chip suspended over the cavity.