Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

Abstract: In one embodiment, the optoelectronic semiconductor chip (1) comprises a semiconductor layer sequence (2) with an active zone (23) for generating radiation with a wavelength of maximum intensity L. A mirror (3) comprises a cover layer (31). The cover layer (31) is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer (31) is followed in a direction away from the semiconductor layer sequence (2) by between inclusive two and inclusive ten intermediate layers (32, 33, 34, 35) of the mirror (3). The intermediate layers (32, 33, 34, 35) alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers (32, 33, 34, 35) is not equal to L/4. The intermediate layers (32, 33, 34, 35) are followed in the direction away from the semiconductor layer sequence (2) by at least one metal layer (39) of the mirror (3) as a reflection layer.

Abstract: In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconductor layer sequence (1) having an active layer (10), a doped current spreading layer (11) and an output coupling layer (12), which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer comprises a larger lateral electrical conductivity than the output coupling layer. The output coupling layer comprises output coupling structures (121) for coupling out radiation on an exit side (120) facing away from the active layer. The output coupling layer comprises a lower absorption coefficient for primary radiation than the current spreading layer.

Abstract: In one embodiment, the optoelectronic semiconductor chip (1) comprises a semiconductor layer sequence (2) with an active zone (23) for generating radiation with a wavelength of maximum intensity L. A mirror (3) comprises a cover layer (31). The cover layer (31) is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer (31) is followed in a direction away from the semiconductor layer sequence (2) by between inclusive two and inclusive ten intermediate layers (32, 33, 34, 35) of the mirror (3). The intermediate layers (32, 33, 34, 35) alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers (32, 33, 34, 35) is not equal to L/4. The intermediate layers (32, 33, 34, 35) are followed in the direction away from the semiconductor layer sequence (2) by at least one metal layer (39) of the mirror (3) as a reflection layer.

Abstract: In one embodiment, the optoelectronic semiconductor chip (1) comprises a semiconductor layer sequence (2) with an active zone (23) for generating a radiation. The semiconductor layer sequence (2) is based on AlInGaP and/or on AlInGaAs. A metal mirror (3) for the radiation is located on a rear side (12) of the semiconductor layer sequence (2) opposite a light extraction side (10). A protective metallization (6) is applied directly to a side of the metal mirror (3) facing away from the semiconductor layer sequence (2). An adhesion promoting layer (7) is located directly on a side of the metal mirror (3) facing the semiconductor layer sequence (2). The adhesion promoting layer (7) is an encapsulation layer for the metal mirror (3), so that the metal mirror (3) is encapsulated at least at one outer edge by the adhesion promoting layer (7) together with the protective metallization (6).