Patents by Inventor Anna Walesieniuk

Anna Walesieniuk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10553543
    Abstract: An integrated circuit package is provided. The integrated circuit package comprises a first and second guard bond wire. The first guard bond wire has a first and second end coupled to ground. The second guard bond wire has a first and second end coupled to ground. The integrated circuit package further comprises a die. The die is mounted between the first and second guard bond wires such that the first and second guard bond wires distort a magnetic field between at least an input terminal and an output terminal of the die.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: February 4, 2020
    Assignee: Ampleon Netherlands B.V.
    Inventors: Vittorio Cuoco, Youri Volkhine, Yi Zhu, Josephus Van Der Zanden, Anna Walesieniuk
  • Publication number: 20190006286
    Abstract: An integrated circuit package is provided. The integrated circuit package comprises a first and second guard bond wire. The first guard bond wire has a first and second end coupled to ground. The second guard bond wire has a first and second end coupled to ground. The integrated circuit package further comprises a die. The die is mounted between the first and second guard bond wires such that the first and second guard bond wires distort a magnetic field between at least an input terminal and an output terminal of the die.
    Type: Application
    Filed: May 12, 2016
    Publication date: January 3, 2019
    Inventors: Vittorio CUOCO, Youri VOLKHINE, Yi ZHU, Josephus VAN DER ZANDEN, Anna WALESIENIUK
  • Publication number: 20140333385
    Abstract: There is described a dual-band semiconductor RF amplifier device. The device comprises (a) a transistor (205) having an output capacitance (CO), (b) a first shunt element (210) arranged in parallel with the output capacitance, the first shunt element comprising a first shunt inductor (L1) connected in series with a first shunt capacitor (C1), and (c) a second shunt element (220) arranged in parallel with the first shunt capacitor, the second shunt element comprising a second shunt inductor (L2) connected in series with a second shunt capacitor (C2), wherein the capacitance of the second shunt capacitor (C2) is at least two times the capacitance of the first shunt capacitor (C1). Furthermore, there is described a method of manufacturing a dual-band semiconductor RF amplifier device and a dual-band RF amplifier comprising a plurality of such amplifier devices.
    Type: Application
    Filed: May 1, 2014
    Publication date: November 13, 2014
    Applicant: NXP B.V.
    Inventors: Venkata Gutta, Anna Walesieniuk, Rob Volgers