Abstract: A diamond-based particle detector includes a diamond substrate that includes a first side and a second side; a first side first doped layer contacting the first side of the diamond substrate; a first metal contact contacting the first side first doped layer, a first side intrinsic diamond layer contacting the first side first doped layer, (i) a second side first doped layer or (ii) a second side intrinsic diamond layer contacting the second side of the diamond substrate; and a second metal contact contacting (i) the second side first doped layer or (ii) the second side intrinsic diamond layer.

Abstract: A semiconductor device has a substrate with a diamond material. A surface of the substrate is prepared using a first reaction process. The first reaction process can be etching or polishing with oxygen and methane at a gas mixture ratio of about 1:2. The surface of the substrate is exposed to hydrogen plasma prior to the first reaction process. A diamond layer is formed over the surface of the substrate using a second reaction process. The second reaction process can be nucleation or epitaxial growth. The transition from the first reaction process to the second reaction process is seamless. The transition is seamless by nature of the second reaction process continuing from the first reaction process. The diamond layer can be formed over the surface of the substrate using a third reaction process, such as an epitaxial growth. A semiconductor device is formed in the substrate and diamond layer.

Abstract: Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.

Abstract: Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.