Patents by Inventor Anna Zaniewski

Anna Zaniewski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Current generation from radiation with diamond diode-based devices for detection or power generation
    Patent number: 11063162
    Abstract: Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: July 13, 2021
    Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY
    Inventors: Jason M Holmes, Franz A Koeck, Manpuneet Benipal, Ricardo O Alarcon, Stephen Goodnick, Anna Zaniewski, Robert Nemanich
  • CURRENT GENERATION FROM RADIATION WITH DIAMOND DIODE-BASED DEVICES FOR DETECTION OR POWER GENERATION
    Publication number: 20200119207
    Abstract: Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.
    Type: Application
    Filed: October 14, 2019
    Publication date: April 16, 2020
    Inventors: Jason M Holmes, Franz A Koeck, Maitreya Dutta, Manpuneet Benipal, Raghuraj Hathwar, Ricardo O Alarcon, Srabanti Chowdhury, Stephen Goodnick, Anna Zaniewski, Robert Nemanich