Abstract: Methods and systems for a location metadata system are disclosed. A data storage subsystem stores collected data associated with locations and users. A network interface is coupled to the data storage subsystem. The network interface manages communication with devices of users to collect data associated with the locations and users. A data analysis system includes a processor adapted for obtaining the collected data from the data storage subsystem and for analyzing the collected data to create a first location identity associated with interaction of users with a first location.

Abstract: In one embodiment, the process comprises depositing a CVD metal oxide layer on the substrate at a substrate temperature of less than or equal to about 480° C. and annealing the metal oxide layer. In one aspect, annealing comprises providing a first substrate temperature between abut 600° C. and 900° C., maintaining the first substrate temperature for a time period of between about 0.1 seconds and 30 minutes, providing a second substrate temperature between about 500° C. to 600° C., and maintaining the second substrate temperature for a time period of at least 10 minutes. In another embodiment, the process comprises depositing a first electrode; depositing a CVD metal oxide layer on the first electrode at a substrate temperature of less than or equal to about 480° C.; and depositing a second electrode on the oxide layer. In one aspect the metal oxide layer is annealed prior to deposition of the second electrode.

Abstract: A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.

Abstract: A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.