Patents by Inventor Annabel Susan Nickles

Annabel Susan Nickles has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6617266
    Abstract: A process for forming high k dielectric thin films on a substrate, e.g., silicon, by 1) low temperature (500° C. or less) deposition of a dielectric material onto a surface, followed by 2) high temperature post-deposition annealing. The deposition can take place in an oxidative environment, followed by annealing, or alternatively the deposition can take place in a non-oxidative environment (e.g., N2), followed by oxidation and annealing.
    Type: Grant
    Filed: April 12, 2001
    Date of Patent: September 9, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Annabel Susan Nickles, Ravi Rajagopalan, Pravin Narwankar
  • Publication number: 20020173126
    Abstract: The present invention provides a means for obtaining dielectric thin films on a substrate, e.g., silicon, by 1) low temperature (500° C. or less) deposition of a dielectric material onto a surface, followed by 2) high temperature post-deposition annealing. The deposition can take place in an oxidative environment, followed by annealing, or alternatively the deposition can take place in a non-oxidative environment (e.g., N2), followed by oxidation and annealing.
    Type: Application
    Filed: April 12, 2001
    Publication date: November 21, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Annabel Susan Nickles, Ravi Rajagopalan, Pravin Narwankar