Abstract: Methods and apparatus are provided for processing a substrate with a bilayer barrier layer. In one aspect, the invention provides a method for processing a substrate including depositing a nitrogen containing barrier layer on a substrate surface and then depositing a nitrogen free barrier layer thereon. The barrier layer may be deposited over dielectric materials, conductive materials, or both. The bilayer barrier layer may also be used as an etch stop, an anti-reflective coating, or a passivation layer.

Abstract: A method and apparatus for cleaning a processing chamber are provided. The cleaning method includes the use of a remote plasma source to generate reactive species and an in situ RF power to generate or regenerate reactive species. The reactive species are generated from a carbon and fluorine-containing gas and an oxygen source.

Abstract: A method for processing a substrate. The method includes introducing one or more precursors into a chemical vapor deposition chamber through a gas distribution plate heated by a heating mechanism disposed at a bottom plate of the gas distribution plate, reacting the precursors to deposit a material on a substrate surface, removing the substrate from the chamber, introducing a cleaning gas into the chamber through the gas distribution plate, and reacting the cleaning gas with deposits within the chamber until substantially all the deposits are consumed.