Patents by Inventor Anne-Marie Bonnot

Anne-Marie Bonnot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Carbon nanotube growth method
    Patent number: 8481163
    Abstract: The invention relates to a method of growing carbon nanotubes (5) on a substrate (1) using a hot-wire-assisted chemical vapor deposition method. The inventive method consists in first depositing a bilayer of titanium (12) and cobalt (13) on the substrate such that: the thickness of the titanium layer is between 0.5 and 5 nm, the thickness of the cobalt layer is between 0.25 and 10 nm, and the thickness of the cobalt layer is between half and double that of the titanium layer.
    Type: Grant
    Filed: April 14, 2004
    Date of Patent: July 9, 2013
    Inventors: Anne-Marie Bonnot, Vincent Bouchiat, Marc Faucher
  • METHOD FOR GROWING A CARBON NANOTUBE ON A NANOMETRIC TIP
    Publication number: 20100154087
    Abstract: The invention relates to a method for the catalytic growth of carbon nanotubes on nanometric tips by chemical vapour deposition assisted by a hot filament, that comprises a first step of applying a preliminary dual-layer coating of cobalt and titanium on said tip, the titanium layer having a thickness of between 0.1 nm and 0.2 nm and cobalt layer having a thickness of between 0.3 nm and 2 nm.
    Type: Application
    Filed: February 1, 2008
    Publication date: June 17, 2010
    Applicant: Centre National De La Rechereche Scientifique (C.N.R.S
    Inventors: Anne-Marie Bonnot, Frederic Gay, Pierre Henri Perrier
  • Carbon nanotube growth method
    Publication number: 20070110971
    Abstract: The invention relates to a method of growing carbon nanotubes (5) on a substrate (1) using a hot-wire-assisted chemical vapour deposition method. The inventive method consists in first depositing a bilayer of titanium (12) and cobalt (13) on the substrate such that: the thickness of the titanium layer is between 0.5 and 5 nm, the thickness of the cobalt layer is between 0.25 and 10 nm, and the thickness of the cobalt layer is between half and double that of the titanium layer.
    Type: Application
    Filed: April 14, 2004
    Publication date: May 17, 2007
    Inventor: Anne-Marie Bonnot