Abstract: An improved enhancement layer operatively disposed between the top protective layer and the photoconductive layer of an electrophotographic device. The enhancement layer is specifically tailored from a semiconductor alloy material designed to substantially prevent charge carriers from being caught in deep midgap traps as said carriers move toward the surface of the electrophotographic device from the photoconductive layer thereof.

Abstract: An improved enhancement layer operatively disposed between the top protective layer and the photoconductive layer of an electrophotographic device. The enhancement layer is specifically tailored from a semiconductor alloy material designed to substantially prevent charge carriers from being caught in deep midgap traps as said carriers move toward the surface of the electrophotographic device from the photoconductive layer thereof. A method of substantially improving charge fatigue and image flow characteristics through the use of such an improved enhancement layer is also disclosed.

Abstract: An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

Abstract: An improved electrophotographic photoreceptor includes a blocking layer formed from a doped, microcrystalline semiconductor alloy. The blocking layer is adapted to cooperate with the photoconductive layer of the photoreceptor to prevent the injection of undesirable charge carriers into the bulk of the photoconductive layer. Also disclosed are methods for the fabrication of the improved photoreceptor.