Patents by Inventor Annie Dallaire

Annie Dallaire has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a functional device with deposited layers subject to high temperature anneal
    Patent number: 6724967
    Abstract: A method is disclosed for making a device having one or more deposited layers and subject to a post deposition high temperature anneal. Opposing films having similar mechanical properties are deposited on the front and back faces of a wafer, which is subsequently subjected a high temperature anneal. The opposing films tend to cancel out stress-induced warping of the wafer during the subsequent anneal.
    Type: Grant
    Filed: March 7, 2001
    Date of Patent: April 20, 2004
    Assignee: Dalsa Semiconductor Inc.
    Inventors: Luc Ouellet, Annie Dallaire
  • Method of making a functional device with deposited layers subject to high temperature anneal
    Publication number: 20020064359
    Abstract: A method is disclosed for making a device having one or more deposited layers and subject to a post deposition high temperature anneal. Opposing films having similar mechanical properties are deposited on the front and back faces of a wafer, which is subsequently subjected a high temperature anneal. The opposing films tend to cancel out stress-induced warping of the wafer during the subsequent anneal.
    Type: Application
    Filed: March 7, 2001
    Publication date: May 30, 2002
    Inventors: Luc Ouellet, Annie Dallaire