Abstract: Disclosed is a skewed sense amplifier with data and reference sides. The data side has two or more series connected n-type field effect transistors (NFETs) between a data input/output node and a switch to a ground. The reference side has one or more series connected NFETs (but fewer than on the data side) between a reference input/output node and the switch. The data input/output node controls the NFET(s) on the reference side and vice versa. Due to a faster current flow rate through the reference side NFET(s) as compared to the data side NFETs, this amplifier is particularly suited for detecting when, at the initiation of a sensing process, the reference input/output node has a high voltage state and the data input/output node has either a high voltage state or a discharging voltage state. Also disclosed is a memory circuit that incorporates such amplifiers for single-ended read operations.

Abstract: Disclosed is a skewed sense amplifier with data and reference sides. The data side has two or more series connected n-type field effect transistors (NFETs) between a data input/output node and a switch to a ground. The reference side has one or more series connected NFETs (but fewer than on the data side) between a reference input/output node and the switch. The data input/output node controls the NFET(s) on the reference side and vice versa. Due to a faster current flow rate through the reference side NFET(s) as compared to the data side NFETs, this amplifier is particularly suited for detecting when, at the initiation of a sensing process, the reference input/output node has a high voltage state and the data input/output node has either a high voltage state or a discharging voltage state. Also disclosed is a memory circuit that incorporates such amplifiers for single-ended read operations.