Patents by Inventor Anpan Han

Anpan Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200402793
    Abstract: The invention relates to a method for creating an organic resist on a surface of a cooled substrate, the method comprising the steps of condensing a vapour into a solid film on the surface of the cooled substrate; patterning at least part of the solid film by exposing selected portions of said solid film to at least one electron beam thereby creating the organic resist on 5 the surface of the cooled substrate in accordance with a predetermined pattern; wherein the created organic resist remains essentially intact at ambient conditions; and using the created organic resist as a mask for creating semiconductor structures and/or semiconductor devices.
    Type: Application
    Filed: May 1, 2017
    Publication date: December 24, 2020
    Applicant: Danmarks Tekniske Universitet
    Inventors: Anpan HAN, William TIDDI, Marco BELEGGIA
  • Patent number: 10442686
    Abstract: The present invention relates to a method for manufacturing an at least partly hollow MEMS structure. In a first step one or more through-going openings is/are provided in core material. The one or more through-going openings is/are then covered by an etch-stop layer. After this step, a bottom electrically conducting layer, one or more electrically conducting vias and a top electrically conducting layer are created. The bottom layer is connected to the vias and vias are connected to the top layer. The vias are formed by filling at least one of the one or more through-going openings. The method further comprises the step of creating bottom and top conductors in the respective bottom and top layers. Finally, excess core material is removed in order to create the at least partly hollow MEMS structure which may include a MEMS inductor.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: October 15, 2019
    Assignee: Danmarks Tekniske Universitet
    Inventors: Hoa Thanh Le, Anpan Han, Karen Birkelund, Anders Michael Jorgensen, Flemming Jensen
  • Publication number: 20180370792
    Abstract: The present invention relates to a method for manufacturing an at least partly hollow MEMS structure. In a first step one or more through-going openings is/are provided in core material. The one or more through-going openings is/are then covered by an etch-stop layer. After this step, a bottom electrically conducting layer, one or more electrically conducting vias and a top electrically conducting layer are created. The bottom layer is connected to the vias and vias are connected to the top layer. The vias are formed by filling at least one of the one or more through-going openings. The method further comprises the step of creating bottom and top conductors in the respective bottom and top layers. Finally, excess core material is removed in order to create the at least partly hollow MEMS structure which may include a MEMS inductor.
    Type: Application
    Filed: September 19, 2016
    Publication date: December 27, 2018
    Applicant: Danmarks Tekniske Universitet
    Inventors: Hoa Thanh LE, Anpan HAN, Karen BIRKELUND, Anders Michael JORGENSEN, Flemming JENSEN
  • Patent number: 8790863
    Abstract: In a method for imaging a solid state substrate, a vapor is condensed to an amorphous solid water condensate layer on a surface of a solid state substrate. Then an image of at least a portion of the substrate surface is produced by scanning an electron beam along the substrate surface through the water condensate layer. The water condensate layer integrity is maintained during electron beam scanning to prevent electron-beam contamination from reaching the substrate during electron beam scanning. Then one or more regions of the layer can be locally removed by directing an electron beam at the regions. A material layer can be deposited on top of the water condensate layer and any substrate surface exposed at the one or more regions, and the water condensate layer and regions of the material layer on top of the layer can be removed, leaving a patterned material layer on the substrate.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: July 29, 2014
    Assignee: President and Fellows of Harvard College
    Inventors: Daniel Branton, Anpan Han, Jene A. Golovchenko
  • Publication number: 20130288182
    Abstract: In a method for imaging a solid state substrate, a vapor is condensed to an amorphous solid water condensate layer on a surface of a solid state substrate. Then an image of at least a portion of the substrate surface is produced by scanning an electron beam along the substrate surface through the water condensate layer. The water condensate layer integrity is maintained during electron beam scanning to prevent electron-beam contamination from reaching the substrate during electron beam scanning. Then one or more regions of the layer can be locally removed by directing an electron beam at the regions. A material layer can be deposited on top of the water condensate layer and any substrate surface exposed at the one or more regions, and the water condensate layer and regions of the material layer on top of the layer can be removed, leaving a patterned material layer on the substrate.
    Type: Application
    Filed: October 26, 2011
    Publication date: October 31, 2013
    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
    Inventors: Daniel Branton, Anpan Han, Jene A. Golovchenko