Abstract: The present invention provides a semiconductor device in which, in order to prevent wiring delay, an electromagnetic wave is radiated from a transmitting dipole antenna placed on a semiconductor chip and received with a receiving antenna placed in a circuit block included in another semiconductor chip, instead of long metal wires or via-hole interconnection.

Abstract: A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.

Abstract: A semiconductor device comprising a silicon substrate and an insulating film adjacent thereto and which operates by applying a voltage to an electrode opposed to the silicon substrate with the insulating film interposed between; wherein an intermediate film is contained that is located between the silicon substrate and the insulating film and has a thickness of 0.2-1 nm. A method for manufacturing such a semiconductor device is also disclosed.

Abstract: A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.

Abstract: A semiconductor device comprising a silicon substrate and an insulating film adjacent thereto and which operates by applying a voltage to an electrode opposed to the silicon substrate with the insulating film interposed between; wherein an intermediate film is contained that is located between the silicon substrate and the insulating film and has a thickness of 0.2-1 nm. A method for manufacturing such a semiconductor device is also disclosed.

Abstract: A substrate has an insulating surface; a fine wire region disposed on the insulating surface of the substrate and extending long in one direction; a first insulating film formed on the fine wire region at least at a partial area along the longitudinal direction of the fine wire region; and a first micro box region formed on the first insulating film over the fine wire region at a partial area along the longitudinal direction of the fine wire region a semiconductor device. The semiconductor device has a fine wire region and a micro box region to realize control of a single electron level. The manufacturing method for the semiconductor device is also disclosed.

Abstract: A single-electron device includes a substrate, an insulating film provided on the substrate, a plurality of nanometer-size conductive particles formed in the insulating film along an interface between the substrate and the insulating film, and an electrode provided on the insulating film, wherein the conductive particles have a generally identical size and arranged substantially in a plane at a depth closer to the substrate.

Abstract: A substrate has an insulating surface; a fine wire region disposed on the insulating surface of the substrate and extending long in one direction; a first insulating film formed on the fine wire region at least at a partial area along the longitudinal direction of the fine wire region; and a first micro box region formed on the first insulating film over the fine wire region at a partial area along the longitudinal direction of the fine wire region a semiconductor device. The semiconductor device has a fine wire region and a micro box region to realize control of a single electron level. The manufacturing method for the semiconductor device is also disclosed.