Patents by Inventor Ansgar Laubsch

Ansgar Laubsch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8581236
    Abstract: An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: November 12, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Matthias Peter, Tobias Meyer, Jürgen Off, Tetsuya Taki, Joachim Hertkorn, Matthias Sabathil, Ansgar Laubsch, Andreas Biebersdorf
  • Publication number: 20120161103
    Abstract: An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.
    Type: Application
    Filed: June 30, 2010
    Publication date: June 28, 2012
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Matthias Peter, Tobias Meyer, Jürgen Off, Tetsuya Taki, Joachim Hertkorn, Matthias Sabathil, Ansgar Laubsch, Andreas Biebersdorf