Abstract: The present invention relates to radialene compounds as well as to their use as doping agent for doping an organic semiconductive matrix material, as blocker material, as charge injection layer, as electrode material as well as organic semiconductor, as well as electronic components and organic semiconductive materials using them.

Abstract: The present invention relates to square planar transition metal complexes and their use in organic semiconductive materials as well as in electronic or optoelectronic components.

Abstract: The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.

Abstract: The present invention relates to the use of a square planar transition metal complex as dopant, charge injection layer, electrode material or storage material.

Abstract: A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a ? complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.

Abstract: The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer structure as a composite layer structure with free charge carriers generated by charge transfer between a first material and a second material, wherein the composite layer structure is provided as a stack of at least three non-mixed sub-layers made of the first material and the second material, respectively, wherein within the stack of the at least three non-mixed sub-layers each first material sub-layer is followed by an adjacent second material sub-layer and each second material sub-layer is followed by an adjacent first material sub-layer, and wherein the first material and the second material are selected to form a host-dopant material system for the electrical doping. The invention also relates to an electronic device.

Abstract: The invention relates to a method for doping a semiconductor material with Cesium, wherein said semiconductor material is exposed to a cesium vapor. Said Cesium vapor is provided by Cesium sublimation from a Cesium alloy. There is also provided an organic light emitting diode comprising at least one layer of a Cesium doped organic semiconductor material, wherein said at least one layer of said Cesium doped organic semiconductor material is doped with Cesium provided by Cesium evaporation of Cesium from a Cesium alloy. The Cesium vapor is preferably provided by Cesium sublimation from a standard organic material deposition evaporator.

Abstract: The invention relates to an electronic device comprising a layer structure of organic layers, wherein said layer structure comprises a p-n-junction between an n-type doped organic layer provided as an organic matrix material doped with an n-type dopant and a p-type doped organic layer provided as a further organic matrix material doped with a p-type dopant, and wherein the n-type dopant and the p-type dopant both are molecular dopants, a reduction potential of the p-type dopant is equal or larger than about 0 V vs. Fc/Fc+, and an oxidation potential of the n-type dopant is equal or smaller than about ?1.5 V vs. Fc/Fc+.

Abstract: The invention relates to an organic light emitting device comprising an anode (2); a cathode (4); and a plurality of organic electroluminescent units (3.1, . . . , 3.m; m?2) provided upon each other in a stack or an inverted stack between said anode (2) and said cathode (4) each of said organic electroluminescent units (3.1, . . . , 3.m) comprising an electroluminescent zone; wherein at least some of the organic electroluminescent units (3.2, . . . , 3.m) comprise a p-type doped hole transporting-layer and/or an n-type doped electron-transporting layer.

Abstract: The invention relates to an organic component, in particular a light-emitting organic component, having an electrode (1; 2) and a counter electrode (2; 1) and also an arrangement of organic layers (3) which is arranged between the electrode (1; 2) and the counterelectrode (2; 1) and which is in electrical contact with the electrode (1; 2) and the counterelectrode (2; 1), the arrangement of organic layers (3) comprising charge carrier transport layers (4, 8) for transporting charge carriers injected from the electrode (1; 2) and from the counterelectrode (2; 1) into the arrangement of organic layers (3), and with an injection layer (5; 9) made from a molecular doping material being formed in the arrangement of organic layers (3) between the electrode (1; 2) and a charge carrier transport layer (4; 8) arranged opposite to the electrode (1; 2), which injection layer is in contact with the charge carrier transport layer (4; 8) arranged opposite to the electrode (1; 2), the molecular doping material having a molec

Abstract: Method for depositing a vapour deposition material on a base material, in particular for doping a semiconductor material, in which a vapour deposition batch, in which the vapour deposition material is enclosed in an air-tight manner by a shell, is introduced into a vapour deposition chamber and the shell is opened in the vapour deposition chamber, so that the vapour deposition material in the vapour deposition chamber then evaporates and is deposited on the base material, wherein the shell is opened by at least partially melting by heating a meltable shell material which at least partially forms the shell at a melting temperature which is lower than an evaporation temperature of the vapour deposition material.

Abstract: The present invention relates to a doped organic semiconductor material comprising at least one organic matrix material, which is doped with at least one dopant, the matrix material being selected from a group consisting of certain phenanthroline derivatives; and also an organic light-emitting diode which comprises such a semiconductor material.

Abstract: The invention relates to a process for producing doped organic semiconductor materials with an elevated charge carrier density and effective charge carrier mobility by doping, in which the doping agent is substantially produced by electrocrystallization in a first step, the doping agent is selected from a group of organic compounds with a low oxidation potential, and in which an organic semiconductor material is doped with the doping agent in a second step. Furthermore, the invention relates to doped organic semiconductor materials with an elevated charge carrier density and effective charge carrier mobility produced by the aforementioned process. Furthermore, the invention relates to an organic diode comprising doped organic semiconductor materials produced in accordance with the aforementioned process.

Abstract: The present invention relates to heterocyclic radicals or diradicals, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, to the use thereof to organic semiconductive materials and to electronic and optoelectronic components.

Abstract: The invention concerns a method for depositing a layer consisting of a doped semiconductor material on a substrate, as well as a device for implementing said method. According to said method, the doped semiconductor material contains at least one semiconductor matrix material and at least one doping material. Said method consists in vaporizing a mixture of the semiconductor material(s) and of the doping material(s) using a vaporizing source, then in depositing said mixture on the substrate.

Abstract: The present invention relates to a doped organic semiconductor material comprising an organic matrix material which is doped with at least one heteromonocyclic and/or heteropolycyclic compound, the compound having at least one nitrogen atom with a free electron pair.

Abstract: The present invention relates to a process for the preparation of doped organic semiconductor materials having an increased charge carrier density and effective charge carrier mobility, by doping with a dopant, a process in which after mixing the dopant into the organic semiconductor material, hydrogen, carbon monoxide, nitrogen or hydroxyl radicals are split off and at least one electron is transferred to the semiconductor material or from the semiconductor material. The process is distinguished by the fact that an uncharged organic compound is used as dopant. Doped organic semiconductor materials are obtainable by one of the processes. The semiconductor materials are distinguished by the fact that the doped layer contains cations of at least one organic compound, the uncharged form of the organic compound being unstable in air.

Abstract: The invention relates to an arrangement for an organic pin-type light-emitting diode with an electrode and a counter-electrode and a stack with organic layers between the electrode and the counter-electrode, where the stack with the organic layers comprises an emission layer comprising a k (k=1, 2, 3, . . . ) organic matrix materials, a doped charge carrier transport layer, which is arranged between the electrode and the emission layer, a further doped charge carrier transport layer, which is arranged between the counter-electrode and the emission layer, and one block layer, which is arranged between one of the doped charge carrier transport layers and the emission layer. The organic layers of the stack are formed by means of n (n?k+2) organic matrix materials, where the n organic matrix materials comprise the k organic matrix materials of the emission layer.

Abstract: The invention relates to a method for doping a semiconductor material with Cesium, wherein said semiconductor material is exposed to a cesium vapor. Said Cesium vapor is provided by Cesium sublimation from a Cesium alloy. There is also provided an organic light emitting diode comprising at least one layer of a Cesium doped organic semiconductor material, wherein said at least one layer of said Cesium doped organic semiconductor material is doped with Cesium provided by Cesium evaporation of Cesium from a Cesium alloy. The Cesium vapor is preferably provided by Cesium sublimation from a standard organic material deposition evaporator.

Abstract: The present invention relates to a process for the preparation of doped organic semiconductor materials having an increased charge carrier density and effective charge carrier mobility, by doping with a dopant, a process in which after mixing the dopant into the organic semiconductor material, hydrogen, carbon monoxide, nitrogen or hydroxyl radicals are split off and at least one electron is transferred to the semiconductor material or from the semiconductor material. The process is distinguished by the fact that an uncharged organic compound is used as dopant. Doped organic semiconductor materials are obtainable by one of the processes. The semiconductor materials are distinguished by the fact that the doped layer contains cations of at least one organic compound, the uncharged form of the organic compound being unstable in air.