Patents by Inventor Anson HERYANTO

Anson HERYANTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making non-volatile memory device
    Patent number: 10475803
    Abstract: Method for forming a memory device are disclosed. Embodiments include forming memory cells over a substrate, each memory cell includes a control gate (CG) formed over a floating gate (FG) and a select gate (SG) formed adjacent to a first side of the CG and FG, wherein a vertical oxide layer is formed between the SG and the CG and FG, forming an implant mask layer over a portion of the SG, CG and vertical oxide of each memory cell; and implanting dopants into the substrate using the implant mask to form source drain (S/D) regions between the memory cells.
    Type: Grant
    Filed: April 6, 2018
    Date of Patent: November 12, 2019
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Anson Heryanto, Eng Huat Toh, Yongshun Sun, Yoke Leng Lim, Siow Lee Chwa
  • METHOD FOR MAKING NON-VOLATILE MEMORY DEVICE
    Publication number: 20190312046
    Abstract: Method for forming a memory device are disclosed. Embodiments include forming memory cells over a substrate, each memory cell includes a control gate (CG) formed over a floating gate (FG) and a select gate (SG) formed adjacent to a first side of the CG and FG, wherein a vertical oxide layer is formed between the SG and the CG and FG, forming an implant mask layer over a portion of the SG, CG and vertical oxide of each memory cell; and implanting dopants into the substrate using the implant mask to form source drain (S/D) regions between the memory cells.
    Type: Application
    Filed: April 6, 2018
    Publication date: October 10, 2019
    Inventors: Anson HERYANTO, Eng Huat TOH, Yongshun SUN, Yoke Leng LIM, Siow Lee CHWA