Patents by Inventor Anson Lin

Anson Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Microelectronic devices including implant regions adjacent to dielectric slot structures, and related memory devices, electronic systems, and methods
    Patent number: 12563728
    Abstract: A microelectronic device comprises lateral contact structures overlying a source structure and comprising conductive material, a cap material overlying the lateral contact structures and comprising implant regions therein, a stack structure overlying the cap material and comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers, and pillars vertically extending through the stack structure and into the source structure. The pillars individually comprise semiconductive channel material in physical contact with the lateral contact structures. The microelectronic device comprises filled slot structures vertically extending at least through the stack structure and the cap material. The filled slot structures are positioned within horizontal areas of the implant regions of the cap material. Related memory devices, electronic systems, and methods of forming the microelectronic devices are also described.
    Type: Grant
    Filed: June 2, 2022
    Date of Patent: February 24, 2026
    Assignee: Micron Technology, Inc.
    Inventors: Zhiqiang Teo, Chun Wei Ee, Anson Lin, Yuwei Ma, Martin J. Barclay, John D. Hopkins, Jordan D. Greenlee
  • MICROELECTRONIC DEVICES INCLUDING IMPLANT REGIONS, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
    Publication number: 20230397418
    Abstract: A microelectronic device comprises lateral contact structures overlying a source structure and comprising conductive material, a cap material overlying the lateral contact structures and comprising implant regions therein, a stack structure overlying the cap material and comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers, and pillars vertically extending through the stack structure and into the source structure. The pillars individually comprise semiconductive channel material in physical contact with the lateral contact structures. The microelectronic device comprises filled slot structures vertically extending at least through the stack structure and the cap material. The filled slot structures are positioned within horizontal areas of the implant regions of the cap material. Related memory devices, electronic systems, and methods of forming the microelectronic devices are also described.
    Type: Application
    Filed: June 2, 2022
    Publication date: December 7, 2023
    Inventors: Zhiqiang Teo, Chun Wei Ee, Anson Lin, Yuwei Ma, Martin J. Barclay, John D. Hopking, Jordan D. Greenlee