Patents by Inventor An Soon Kim
An Soon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20130331295Abstract: Provided is a biosensor chip. The biosensor chip includes a plurality of biosensor cells that are arranged in a matrix and selectively generate and output a sensed signal by addressing of external light, at least one sensing line that is simultaneously connected with the plurality of biosensor cells and transmits the sensed signal from one selected from the biosensor cells, and an output terminal that receives the sensed signal from the sensing line and outputs the sensed signal to an external reader. Thus, the biosensor cells are set in array in the biosensor chip without a separate driving unit, so that a process of manufacturing the biosensor chip is simplified. The biosensor cell to be sensed is selectively addressed through the external light, so that it is possible to reduce a price of the biosensor chip used as a disposable chip.Type: ApplicationFiled: August 14, 2013Publication date: December 12, 2013Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun AHN, Chan Woo PARK, Jong Heon YANG, Tae Youb KIM, Chil Seong AH, An Soon KIM, Bong Kyu KIM, Gun Yong SUNG, Seon Hee PARK
-
Patent number: 8426900Abstract: Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.Type: GrantFiled: May 27, 2009Date of Patent: April 23, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, An Soon Kim, Tae Youb Kim, Gun Yong Sung
-
Patent number: 8263964Abstract: Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused.Type: GrantFiled: May 19, 2008Date of Patent: September 11, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Han Young Yu, Byung Hoon Kim, An Soon Kim, In Bok Baek, Chil Seong Ah, Jong Heon Yang, Chan Woo Park, Chang Geun Ahn
-
Patent number: 8241939Abstract: A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the secType: GrantFiled: July 24, 2008Date of Patent: August 14, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Chan Woo Park, Chang Geun Ahn, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Myung Sim Jun
-
Patent number: 8163240Abstract: A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.Type: GrantFiled: June 13, 2008Date of Patent: April 24, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Seon Hee Park
-
Patent number: 8164123Abstract: Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device.Type: GrantFiled: February 11, 2010Date of Patent: April 24, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Chan Woo Park, Chang Geun Ahn, Chil Seong Ah, Tae Youb Kim, An Soon Kim, Jong Heon Yang, Gun Yong Sung
-
Publication number: 20110194976Abstract: A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.Type: ApplicationFiled: June 13, 2008Publication date: August 11, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Seon Hee Park
-
Publication number: 20110193052Abstract: Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused.Type: ApplicationFiled: May 19, 2008Publication date: August 11, 2011Applicant: Electronics and Telecommunications Research InstitInventors: Han Young Yu, Byung Hoon Kim, An Soon Kim, In Bok Baek, Chil Seong Ah, Jong Heon Yang, Chan Woo Park, Chang Geun Ahn
-
Publication number: 20110180856Abstract: Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.Type: ApplicationFiled: May 27, 2009Publication date: July 28, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, An Soon Kim, Tae Youb Kim, Gun Yong Sung
-
Publication number: 20110151139Abstract: A method for selectively functionalizing a non-modified solid surface to create a photoresponsive coating layer includes: functionalizing a non-modified solid surface only, which is not oxidized and nitrified, with hydrogen; forming an EGPA coating layer on the non-modified solid surface functionalized with hydrogen using light; forming an EGA coating layer by removing an amine protecting group or an amine salt from the EGPA coating layer; and forming a coating layer having a photoresponsive functional group on the non-modified solid surface using the EGA coating layer.Type: ApplicationFiled: November 11, 2010Publication date: June 23, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: An Soon KIM, Wan Joong Kim, Chil Seong Ah, Chan Woo Park, Jong Heon Yang, Tae Youb Kim, Chang Geun Ahn, Gun Yong Sung
-
Publication number: 20110068015Abstract: Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device.Type: ApplicationFiled: February 11, 2010Publication date: March 24, 2011Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Chan Woo Park, Chang Geun Ahn, Chil Seong Ah, Tae Youb Kim, An Soon Kim, Jong Heon Yang, Gun Yong Sung
-
Publication number: 20110053290Abstract: Provided is a biosensor chip. The biosensor chip includes a plurality of biosensor cells that are arranged in a matrix and selectively generate and output a sensed signal by addressing of external light, at least one sensing line that is simultaneously connected with the plurality of biosensor cells and transmits the sensed signal from one selected from the biosensor cells, and an output terminal that receives the sensed signal from the sensing line and outputs the sensed signal to an external reader. Thus, the biosensor cells are set in array in the biosensor chip without a separate driving unit, so that a process of manufacturing the biosensor chip is simplified. The biosensor cell to be sensed is selectively addressed through the external light, so that it is possible to reduce a price of the biosensor chip used as a disposable chip.Type: ApplicationFiled: August 17, 2010Publication date: March 3, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, Tae Youb Kim, Chil Seong Ah, An Soon Kim, Bong Kyu Kim, Gun Yong Sung, Seon Hee Park
-
Patent number: 7893466Abstract: Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.Type: GrantFiled: August 20, 2008Date of Patent: February 22, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Jong Heon Yang, In Bok Baek, Chang Geun Ahn, Chan Woo Park, An Soon Kim, Han Young Yu, Chil Seong Ah, Tae Youb Kim, Myung Sim Jun, Moon Gyu Jang
-
Publication number: 20100270530Abstract: A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device.Type: ApplicationFiled: July 24, 2008Publication date: October 28, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: Chan Woo Park, Chang Geun Ahn, Jong Heon Yang, In Book Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Myung Sim Jun
-
Publication number: 20090152596Abstract: Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.Type: ApplicationFiled: August 20, 2008Publication date: June 18, 2009Applicant: Electronics and Telecommunications Research InstituteInventors: Jong Heon YANG, In Bok Baek, Chang Geun Ahn, Chan Woo Park, An Soon Kim, Han Young Yu, Chil Seong Ah, Tae Youb Kim, Myung Sim Jun, Moon Gyu Jang
-
Publication number: 20090152598Abstract: Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities.Type: ApplicationFiled: September 29, 2008Publication date: June 18, 2009Applicant: Electronics and Telecommunications Research InstituteInventors: In Bok BAEK, Jong Heon Yang, Chang Geun Ahn, Han Young Yu, Chil Seong Ah, Chan Woo Park, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Myung Sim Jun