Patents by Inventor An Soon Kim

An Soon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130331295
    Abstract: Provided is a biosensor chip. The biosensor chip includes a plurality of biosensor cells that are arranged in a matrix and selectively generate and output a sensed signal by addressing of external light, at least one sensing line that is simultaneously connected with the plurality of biosensor cells and transmits the sensed signal from one selected from the biosensor cells, and an output terminal that receives the sensed signal from the sensing line and outputs the sensed signal to an external reader. Thus, the biosensor cells are set in array in the biosensor chip without a separate driving unit, so that a process of manufacturing the biosensor chip is simplified. The biosensor cell to be sensed is selectively addressed through the external light, so that it is possible to reduce a price of the biosensor chip used as a disposable chip.
    Type: Application
    Filed: August 14, 2013
    Publication date: December 12, 2013
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Chang Geun AHN, Chan Woo PARK, Jong Heon YANG, Tae Youb KIM, Chil Seong AH, An Soon KIM, Bong Kyu KIM, Gun Yong SUNG, Seon Hee PARK
  • Patent number: 8426900
    Abstract: Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.
    Type: Grant
    Filed: May 27, 2009
    Date of Patent: April 23, 2013
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, An Soon Kim, Tae Youb Kim, Gun Yong Sung
  • Patent number: 8263964
    Abstract: Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused.
    Type: Grant
    Filed: May 19, 2008
    Date of Patent: September 11, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Han Young Yu, Byung Hoon Kim, An Soon Kim, In Bok Baek, Chil Seong Ah, Jong Heon Yang, Chan Woo Park, Chang Geun Ahn
  • Patent number: 8241939
    Abstract: A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the sec
    Type: Grant
    Filed: July 24, 2008
    Date of Patent: August 14, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chan Woo Park, Chang Geun Ahn, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Myung Sim Jun
  • Patent number: 8163240
    Abstract: A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.
    Type: Grant
    Filed: June 13, 2008
    Date of Patent: April 24, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Seon Hee Park
  • Patent number: 8164123
    Abstract: Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device.
    Type: Grant
    Filed: February 11, 2010
    Date of Patent: April 24, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chan Woo Park, Chang Geun Ahn, Chil Seong Ah, Tae Youb Kim, An Soon Kim, Jong Heon Yang, Gun Yong Sung
  • Publication number: 20110194976
    Abstract: A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.
    Type: Application
    Filed: June 13, 2008
    Publication date: August 11, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Seon Hee Park
  • Publication number: 20110193052
    Abstract: Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused.
    Type: Application
    Filed: May 19, 2008
    Publication date: August 11, 2011
    Applicant: Electronics and Telecommunications Research Instit
    Inventors: Han Young Yu, Byung Hoon Kim, An Soon Kim, In Bok Baek, Chil Seong Ah, Jong Heon Yang, Chan Woo Park, Chang Geun Ahn
  • Publication number: 20110180856
    Abstract: Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.
    Type: Application
    Filed: May 27, 2009
    Publication date: July 28, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, An Soon Kim, Tae Youb Kim, Gun Yong Sung
  • Publication number: 20110151139
    Abstract: A method for selectively functionalizing a non-modified solid surface to create a photoresponsive coating layer includes: functionalizing a non-modified solid surface only, which is not oxidized and nitrified, with hydrogen; forming an EGPA coating layer on the non-modified solid surface functionalized with hydrogen using light; forming an EGA coating layer by removing an amine protecting group or an amine salt from the EGPA coating layer; and forming a coating layer having a photoresponsive functional group on the non-modified solid surface using the EGA coating layer.
    Type: Application
    Filed: November 11, 2010
    Publication date: June 23, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: An Soon KIM, Wan Joong Kim, Chil Seong Ah, Chan Woo Park, Jong Heon Yang, Tae Youb Kim, Chang Geun Ahn, Gun Yong Sung
  • Publication number: 20110068015
    Abstract: Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device.
    Type: Application
    Filed: February 11, 2010
    Publication date: March 24, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Chan Woo Park, Chang Geun Ahn, Chil Seong Ah, Tae Youb Kim, An Soon Kim, Jong Heon Yang, Gun Yong Sung
  • Publication number: 20110053290
    Abstract: Provided is a biosensor chip. The biosensor chip includes a plurality of biosensor cells that are arranged in a matrix and selectively generate and output a sensed signal by addressing of external light, at least one sensing line that is simultaneously connected with the plurality of biosensor cells and transmits the sensed signal from one selected from the biosensor cells, and an output terminal that receives the sensed signal from the sensing line and outputs the sensed signal to an external reader. Thus, the biosensor cells are set in array in the biosensor chip without a separate driving unit, so that a process of manufacturing the biosensor chip is simplified. The biosensor cell to be sensed is selectively addressed through the external light, so that it is possible to reduce a price of the biosensor chip used as a disposable chip.
    Type: Application
    Filed: August 17, 2010
    Publication date: March 3, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, Tae Youb Kim, Chil Seong Ah, An Soon Kim, Bong Kyu Kim, Gun Yong Sung, Seon Hee Park
  • Patent number: 7893466
    Abstract: Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.
    Type: Grant
    Filed: August 20, 2008
    Date of Patent: February 22, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jong Heon Yang, In Bok Baek, Chang Geun Ahn, Chan Woo Park, An Soon Kim, Han Young Yu, Chil Seong Ah, Tae Youb Kim, Myung Sim Jun, Moon Gyu Jang
  • Publication number: 20100270530
    Abstract: A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device.
    Type: Application
    Filed: July 24, 2008
    Publication date: October 28, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Chan Woo Park, Chang Geun Ahn, Jong Heon Yang, In Book Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Myung Sim Jun
  • Publication number: 20090152596
    Abstract: Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.
    Type: Application
    Filed: August 20, 2008
    Publication date: June 18, 2009
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Jong Heon YANG, In Bok Baek, Chang Geun Ahn, Chan Woo Park, An Soon Kim, Han Young Yu, Chil Seong Ah, Tae Youb Kim, Myung Sim Jun, Moon Gyu Jang
  • Publication number: 20090152598
    Abstract: Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities.
    Type: Application
    Filed: September 29, 2008
    Publication date: June 18, 2009
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: In Bok BAEK, Jong Heon Yang, Chang Geun Ahn, Han Young Yu, Chil Seong Ah, Chan Woo Park, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Myung Sim Jun