Abstract: The present invention provides a method for the production of semiconductor ribbons using exclusively a gaseous feedstock. A fine powder of semiconductor material is produced by decomposition, within the gas phase, of a gaseous feedstock. A layer of this semiconductor powder is uniformly distributed, compressed and flattened over a planar substrate, which is continuously moving in one direction. This said layer of semiconductor powder is, in the following stage, heated to a temperature sufficient to decompose the said gaseous feedstock on its surface. A continuous flow of the said gaseous feedstock over said powder layer is ensured so that a solid plate of semiconductor material grows over the said layer of semiconductor powder. After the growth stage, during which the solid plate has grown to a convenient thickness, the said solid plate of semiconductor material is separated from the said layer of semiconductor powder and substrate.

Abstract: The present invention provides a method for the continuous production of semiconductor ribbons by growth from a linear molten zone. The creation of the molten zone is achieved by application of an electric current, direct or alternating, parallel to the surface of the ribbon and perpendicular to the direction of growth, and intense enough to melt the said material, preferably using electrodes of the said material. The molten zone is fed by transference of the material, in the liquid state, from one or more reservoirs, where melting of the feedstock occurs. Preferably, the said electrodes and the said reservoir(s) are only constituted by the said material, thus avoiding contamination by foreign materials. The present invention is applicable, for example, in the industry of silicon ribbons production for photovoltaic application.

Abstract: The present invention provides a method for the continuous production of semiconductor ribbons by growth from a linear molten zone. The creation of the molten zone is achieved by application of an electric current, direct or alternating, parallel to the surface of the ribbon and perpendicular to the direction of growth, and intense enough to melt the said material, preferably using electrodes of the said material. The molten zone is fed by transference of the material, in the liquid state, from one or more reservoirs, where melting of the feedstock occurs. Preferably, the said electrodes and the said reservoir(s) are only constituted by the said material, thus avoiding contamination by foreign materials. The present invention is applicable, for example, in the industry of silicon ribbons production for photovoltaic application.