Abstract: A multi-core microprocessor provides an indication of the power management state of each of the cores on output terminals. Cooling of the cores is adjusted responsive to the indication of the power management state of the respective cores with additional cooling being provided to those cores in a more active state and less cooling provided to those cores in a less active state.

Abstract: A multi-core microprocessor provides an indication of the power management state of each of the cores on output terminals. Cooling of the cores is adjusted responsive to the indication of the power management state of the respective cores with additional cooling being provided to those cores in a more active state and less cooling provided to those cores in a less active state.

Abstract: A multi-core microprocessor provides an indication of the power management state of each of the cores on output terminals. Cooling of the cores is adjusted responsive to the indication of the power management state of the respective cores with additional cooling being provided to those cores in a more active state and less cooling provided to those cores in a less active state.

Abstract: A multi-core microprocessor provides an indication of the power management state of each of the cores on output terminals. Cooling of the cores is adjusted responsive to the indication of the power management state of the respective cores with additional cooling being provided to those cores in a more active state and less cooling provided to those cores in a less active state.

Abstract: A method that includes forming a gate of a semiconductor device on a substrate, and etching sidewall spacers on sides of the gate to provide a proximity value, where the proximity value is defined as a distance between the gate and an edge of a performance-enhancing region. The sidewall spacers are used to define the edge of the region during formation of the region in the substrate. The method also includes pre-cleaning the gate and the substrate in preparation for formation of the region, where the etching and the pre-cleaning are performed in a continuous vacuum.

Abstract: Miniaturized complex transistor devices are formed with reduced leakage and reduced miller capacitance. Embodiments include transistors having reduced capacitance between the gate electrode and source/drain contact, as by utilizing a low-K dielectric constant sidewall spacer material. An embodiment includes forming a gate electrode on a semiconductor substrate, forming a sidewall spacer on the side surfaces of the gate electrode, forming source/drain regions by ion implantation, forming an interlayer dielectric over the gate electrode, sidewall spacers, and substrate, and forming a source/drain contact through the interlayer dielectric. The sidewall spacers and interlayer dielectric are then removed. A dielectric material, such as a low-K dielectric material, is then deposited in the gap between the gate electrode and the source/drain contact so that an air gap is formed, thereby reducing the parasitic “miller” capacitance.

Abstract: Miniaturized complex transistor devices are formed with reduced leakage and reduced miller capacitance. Embodiments include transistors having reduced capacitance between the gate electrode and source/drain contact, as by utilizing a low-K dielectric constant sidewall spacer material. An embodiment includes forming a gate electrode on a semiconductor substrate, forming a sidewall spacer on the side surfaces of the gate electrode, forming source/drain regions by ion implantation, forming an interlayer dielectric over the gate electrode, sidewall spacers, and substrate, and forming a source/drain contact through the interlayer dielectric. The sidewall spacers and interlayer dielectric are then removed. A dielectric material, such as a low-K dielectric material, is then deposited in the gap between the gate electrode and the source/drain contact so that an air gap is formed, thereby reducing the parasitic “miller” capacitance.

Abstract: A method that includes forming a gate of a semiconductor device on a substrate, and etching sidewall spacers on sides of the gate to provide a proximity value, where the proximity value is defined as a distance between the gate and an edge of a performance-enhancing region. The sidewall spacers are used to define the edge of the region during formation of the region in the substrate. The method also includes pre-cleaning the gate and the substrate in preparation for formation of the region, where the etching and the pre-cleaning are performed in a continuous vacuum.