Patents by Inventor Anthony Copeland Jones

Anthony Copeland Jones has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110184156
    Abstract: Rare earth metal precursors, for use in MOCVD techniques have a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group. Methods of making such precursors and methods of depositing metal oxide layers from such precursors are also described.
    Type: Application
    Filed: April 12, 2011
    Publication date: July 28, 2011
    Applicant: SIGMA-ALDRICH CO.
    Inventor: Anthony Copeland Jones
  • Patent number: 7927661
    Abstract: Methods of depositing a single or mixed metal oxide layer or film are described herein. The methods use a rare earth metal precursor are described herein. The rare earth metal precursors have a general formula M[OCR1(R2)(CH2)X]3, wherein M is a rare earth metal, R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR, wherein R is an alkyl group or a substituted alkyl group.
    Type: Grant
    Filed: March 11, 2004
    Date of Patent: April 19, 2011
    Assignee: Sigma-Aldrich Co.
    Inventor: Anthony Copeland Jones
  • Patent number: 7419698
    Abstract: Ti, Zr Hf and La precursors for use in MOCVD techniques have a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group.
    Type: Grant
    Filed: October 25, 2002
    Date of Patent: September 2, 2008
    Assignee: Sigma-Aldrich Co.
    Inventor: Anthony Copeland Jones
  • Patent number: 6248928
    Abstract: A method of manufacturing a strontium &bgr;-diketonate precursor suitable for MOCVD techniques comprises the step of reacting strontium with a sterically hindered alcohol to produce strontium alkoxide, subsequently reacting the strontium alkoxide with a &bgr;-diketone to form a strontium &bgr;-diketonate alcohol adduct and removing the alcohol from the adduct.
    Type: Grant
    Filed: July 21, 2000
    Date of Patent: June 19, 2001
    Assignee: Inorgtech Limited
    Inventor: Anthony Copeland Jones
  • Patent number: 5980978
    Abstract: Semiconductor devices are prepared by growth of epitaxial layers on a substrate from metalorganic compounds of the formula MR.sub.3, R being an alkyl group, or its amine adduct. The metalorganic compound was prepared by reacting a Grignard reagent with a metal halide in an amine solvent.
    Type: Grant
    Filed: July 14, 1997
    Date of Patent: November 9, 1999
    Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland of Defence Evaluation and Research Agency
    Inventors: Anthony Copeland Jones, Simon Andrew Rushworth, Trevor Martin, Timothy John Whittaker, Richard William Freer
  • Patent number: 5886203
    Abstract: A process is provided for the production of metalorganic compounds by reacting a Grignard reagent with a Group II, Group III or Group V metal halide in a tertiary alkyl amine solvent to form a metalorganic adduct, isolating the adduct and dissociating the adduct to leave the metalorganic compound.
    Type: Grant
    Filed: July 14, 1997
    Date of Patent: March 23, 1999
    Assignee: Secretary of State For Defence Acting Through His Defence Evaluation & Research Agency
    Inventors: Anthony Copeland Jones, Simon Andrew Rushworth, Trevor Martin, Timothy John Whittaker, Richard William Freer