Abstract: CCR2 is involved in the regulation of normal cardiovascular function and during the cardiovascular stress response to hemorrhagic shock and fluid resuscitation. Disclosed herein are methods of using CCR2 inhibitors to reduce fluid requirements and to prevent death from hemodynamic decompensation during resuscitation.

Abstract: In one example an electronic device includes a first resistor and a second resistor. The first resistor includes a first resistive layer located over a substrate, the first resistive layer having a first sheet resistance. The second resistor includes a first portion of a second resistive layer located over the substrate, the second resistive layer having a second sheet resistance different from the first sheet resistance. The first resistive layer is located between the substrate and a second noncontiguous portion of the second resistive layer.

Abstract: In one example an electronic device includes a first resistor and a second resistor. The first resistor includes a first resistive layer located over a substrate, the first resistive layer having a first sheet resistance. The second resistor includes a first portion of a second resistive layer located over the substrate, the second resistive layer having a second sheet resistance different from the first sheet resistance. The first resistive layer is located between the substrate and a second noncontiguous portion of the second resistive layer.

Abstract: A method of forming an electronic device includes forming an opening through a dielectric layer located over a first resistive layer, the first resistive layer having a first sheet resistance. A second resistive layer is deposited over the dielectric layer and into the opening. The second resistive layer has a second sheet resistance different from the first sheet resistance. A portion of the second resistive layer is removed, thereby forming first and second noncontiguous portions of the second resistive layer, wherein the second portion of the second resistive layer contacts the first resistive layer.

Abstract: An antenna apparatus for mounting on a non-conductive chassis with a printed circuit board includes a folded metal antenna element having an integral folded metal balun, wherein the balun is connected to the folded metal antenna, and metal end portions on the folded metal balun connect with conductive pads on a printed circuit board. The pads directly connect to RF circuitry on the printed circuit board such that an electrical connection between the metal end portions of the folded metal balun and the RF circuitry is made without an RF cable or separate connector.

Abstract: An electronic device includes a first resistor and a second resistor. The first resistor includes a first resistive layer located over a substrate and having a first sheet resistance. The second resistor includes a first portion of a second resistive layer located over the substrate and having a second sheet resistance that is different from the first sheet resistance. The first resistive layer is located between the substrate and a second noncontiguous portion of the second resistive layer.

Abstract: An integrated circuit includes a higher sheet resistance resistor and a lower sheet resistance resistor, disposed in a same level of dielectric layers of the integrated circuit. The higher sheet resistor has a body region and head regions in a higher sheet resistance layer. The lower sheet resistor has a body region and head regions in a lower sheet resistance layer, which is thicker than the higher sheet layer. The higher sheet resistor has an upper head layer contacting the higher sheet layer at each head region of the higher sheet layer. Each upper head layer has a same composition and thickness as the lower sheet layer of the lower sheet resistor. The lower sheet resistor is free of head layers over the lower sheet resistance layer.

Abstract: An integrated circuit includes a higher sheet resistance resistor and a lower sheet resistance resistor, disposed in a same level of dielectric layers of the integrated circuit. The higher sheet resistor has a body region and head regions in a higher sheet resistance layer. The lower sheet resistor has a body region and head regions in a lower sheet resistance layer, which is thicker than the higher sheet layer. The higher sheet resistor has an upper head layer contacting the higher sheet layer at each head region of the higher sheet layer. Each upper head layer has a same composition and thickness as the lower sheet layer of the lower sheet resistor. The lower sheet resistor is free of head layers over the lower sheet resistance layer.

Abstract: A drawstring bag with lockable strap using a combination lockable buckle and an internal compartment that is provided with a combination lockable zipper. This bag incorporates a desirably designed bag with the safety of a built-in combination lockable strap and buckle which allows the user to secure it to another object. Additionally, the internal compartment is accessed via a combination lockable zipper. Both locks have built in, easy to remember, codes.

Abstract: A system and method of forming a hermetic seal between a lens or window and a lid, which minimizes bending moments, and therefore, bifringance on the window or lens is disclosed. This is accomplished by use of a transition member, specific geometries, and selection of the coefficient of thermal expansion of the materials to insure that the solder joint is in compression on cool down and solder strains are maintained within acceptable limits. The transition member may be soldered or welded to lid or integral through machining.

Abstract: A coupling and method for forming a hermetic seal between a component and a housing is provided in which a mechanical joint is formed between an exposed interior surface of the component and an exterior surface of a protrusion on the housing. The coefficients of thermal expansion of the connector and the housing are chosen such that the solder joint is in compression during cool down of the solder.

Abstract: A coupling and method for forming a hermetic seal between a component and a housing is provided in which a mechanical joint is formed between an exposed interior surface of the component and an exterior surface of a protrusion on the housing. The coefficients of thermal expansion of the connector and the housing are chosen such that the solder joint is in compression during cool down of the solder.

Abstract: A system and method of forming a hermetic seal between a lens or window and a lid, which minimizes bending moments, and therefore, bifringance on the window or lens is disclosed. This is accomplished by use of a transition member, specific geometries, and selection of the coefficient of thermal expansion of the materials to insure that the solder joint is in compression on cool down and solder strains are maintained within acceptable limits. The transition member may be soldered or welded to lid or integral through machining.

Abstract: A hermetically sealed connector and method for providing the same is provided. Generally, the connector contains a header having a series of pins secured therein, wherein the header has an upper portion that extends in a direction perpendicular to a central axis of a pin within the series of pins. The header also has a lower lip portion that extends in a direction perpendicular to the upper lip portion. The connector also contains an outer body having a series of clearance layers therein that are defined by an inner wall of the outer body, wherein each clearance layer within the series of clearance layers has an associated diameter, and wherein the header is connected to a first portion of the inner wall via a solder joint that extends from the lower lip portion of the header to the first portion of the inner wall. The first portion of the inner wall also has at least two different diameters.

Abstract: A method of forming and planarizing a deep isolation trench in a silicon-on-insulator (SOI) structure begins with a base semiconductor substrate, a buried insulator layer formed on the base semiconductor substrate, and an active silicon layer formed on the buried insulator layer. First, an ONO layer is formed on the active silicon layer. The ONO layer includes a layer of field oxide, a first layer of silicon nitride and a layer of deposited hardmask oxide. A trench having sidewalls that extend to the buried oxide layer is formed. A layer of trench lining oxide is then formed on the exposed sidewalls of the trench. Then, a second layer of silicon nitride is conformally formed on the substrate.